Sumitomo Chemical Company, Limited

Yuichi Hiroyama

Masahiko Hata

Tomoyuki Takada

Yoshinari Sawabe

Yoshihiko Tsuchida

Osamu Ichikawa

A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrodeis projecting toward a higher-temperature side substrateand the lower-temperature side electrodeis formed with slope faces, and an angle &#x3b8; of each of the slope face to a surface of a lower-temperature side substrateis an acute angle. A faceof a p-type thermoelectric conversion elementin contact with the lower-temperature side electrodeis along one slope faceof the lower-temperature side electrode and a faceof an n-type thermoelectric conversion elementin contact with the lower-temperature side electrodeis along the other slope faceof the lower-temperature side electrode; the p-type thermoelectric conversion elementand the n-type thermoelectric conversion elementare in contact with the lower-temperature side electrodethrough the respective slope faces; a pressing memberpresses a portion on the lower-temperature side substrate side of an outside thermoelectric conversion element, toward the other outside thermoelectric conversion element

Thermoelectric conversion module

A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. The light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m&#x2267;2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N&#x2267;2, providing N&#x2266;m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern.

Monolithic light emitting device and driving method therefor

A thin-film semiconductor epitaxial substrate comprising a substrate and a sub-collector layer, a collector layer, a base layer and an emitter layer(s) which are formed as thin-film semiconductor epitaxial layers on said substrate, wherein boron (B) added is present in at least a part of a layer portion comprising said sub-collector layer and said collector layer.

Growing community of inventors

Tsukuba, Japan

Yuichi Hiroyama