Hitachi Displays, Ltd.

Hitachi, Ltd.

Yuichi Harano

Toshiki Kaneko

Jun Gotoh

Masanao Yamamoto

Takahiro Ochiai

Hideaki Yamamoto

Kenichi Onisawa

Masaru Takabatake

Takuya Takahashi

Katsumi Tamura

Masatomo Terakado

Kenichi Cyahara

The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

Display device manufacturing method preventing diffusion of an aluminum element into a polysilicon layer in a heating step

Display device and manufacturing method of the same

The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

Liquid crystal display device and method of manufacturing the same

Growing community of inventors

Hitachi, Japan

Yuichi Harano