Sony Corporation

Kobelco Construction Machinery Co., Ltd.

Sinfonia Technology Co., Ltd.

Yuichi Hamaguchi

Kenji Sasaki

Hidekazu Kawanishi

Noriyuki Banno

Takeo Ito

Shiro Omori

Masahide Hirama

Takeharu Asano

Yusuke Kamimura

Hiroyuki Fukasawa

Takeshi Tomizaki

Akira Nakazumi

Keigo Aga

Hajime Numata

Yasumasa Oda

Tomoyuki Kitamura

An image capture device assembly includes a light source that emits a reference light pattern, an image capture device, and a control device that controls the light source and the image capture device. The light source emits the reference light pattern to a subject with high brightness and low brightness, respectively, under the control of the control device. The image capture device captures an image of the reference light pattern and the subject in a high brightness irradiation state and outputs a first image signal to the control device. The image capture device captures an image of at least the subject in a low brightness irradiation state and outputs a second image signal to the control device. The control device generates a reference light pattern image signal from a difference between the first image signal and the second image signal.

Capture device assembly, three-dimensional shape measurement device, and motion detection device

There is provided a motor controller capable of suppressing the rotation of a motor at the time of discharging an electric accumulator, and a construction machine provided with the motor controller. A motor controlleris provided with a current controllerfor controlling an electric current supplied from an electric accumulator E to a motor M, and a rotation detectorfor detecting the rotation of the motor M. The current controllersupplies only a d-axis current to the motor M according to a discharge command. If the rotation of the motor M is detected by the rotation detectorat the time of discharging the electric accumulator E, the current controllercontrols the d-axis current so as to suppress the rotation of the motor M.

Motor controller and construction machine provided therewith

A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base.

Light-emitting device and method of manufacturing the same

The present invention is directed to improve reliability by preventing deterioration in the structure of an inner wall of a water channel caused by galvanic corrosion. A heat sink in which a water channel of a cooling fluid is formed by stacking and bonding a plurality of thin plates, in which a surface in the water channel is made of the same metal material except for at least an end of a bonded part of the thin plates.

Heat sink and laser diode

A semiconductor laser device has a heat sink of which multiple laminated plates are constituted and a semiconductor laser element mounted on upper surface of the heat sink. The heat sink has a channel in which a coolant flows inside thereof. The heat sink includes a channel-forming plate portion that forms the channel and a mounting plate portion that forms an upper surface of the heat sink that comes into contact with the channel. The mounting plate portion is made of material having a thermal expansion coefficient, which is closer to that of the semiconductor laser element than that of the channel-forming plate portion.

Semiconductor laser device and heat sink used therein

The present invention provides a light emitting device solving weakness caused by bonding between first and second light emitting elements and a method of manufacturing the same. A chip-shaped first light emitting element and a second light emitting element overlapped each other are disposed on a supporting base. Four island-shaped projections are provided on the top face of the supporting base, and support the second light emitting element. The projections are formed by wet-etching or dry-etching the supporting base, and a pad electrode is provided on the top face of the projection. The pad electrode is electrically connected to the second light emitting element and is also electrically connected to a wire.

Light emitting device and method of manufacturing the same

To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 &mgr;m or less.

Semiconductor laser emitting apparatus

A method of fabricating a semiconductor light emitting device includes fabricating semiconductor light emitting devices on a large scale by forming desirable end surfaces of resonators using an etching process. The method includes the steps of forming, on a base body, semiconductor layers for constituting a plurality of semiconductor light emitting devices; grooving the semiconductor layers formed on the base body in the direction from a front surface of the semiconductor layers to the base body, to form stripe-like grooves; and forming a semiconductor film in the grooves by epitaxial growth; wherein a side surface of each of the grooves, which side surface finally forms an end surface of a resonator of each of the semiconductor light emitting devices, is a crystal plane being later in epitaxial growth rate than a bottom surface of the groove.

Method of fabricating a semiconductor light emitting device with etched end surface

A method of fabricating a semiconductor light emitting device includes fabricating, semiconductor light emitting devices on a large scale by forming desirable end surfaces of resonators using an etching process. The method includes the steps of forming, on a base body, semiconductor layers for constituting a plurality of semiconductor light emitting devices; grooving the semiconductor layers formed on the base body in the direction from a front surface of the semiconductor layers to the base body, to form stripe-like grooves; and forming a semiconductor film in the grooves by epitaxial growth; wherein a side surface of each of the grooves, which side surface finally forms an end surface of a resonator of each of the semiconductor light emitting devices, is a crystal plane being later in epitaxial growth rate than a bottom surface of the groove.

Growing community of inventors

Tokyo, Japan

Yuichi Hamaguchi