Nissan Chemical Corporation

Thin Film Electronics Asa

Nissan Chemical Industries Limited

Yuichi Goto

Gun Son

Masahisa Endo

Wataru Shibayama

Rikimaru Sakamoto

Makoto Nakajima

Shun Kubodera

Kentaro Nagai

Takafumi Endo

Yasunobu Someya

Tokio Nishita

Satoshi Takeda

Hitoshi Furusho

Ryuta Mizuochi

Hisayuki Watanabe

Satoshi Kamibayashi

Ken Ishibashi

Yuki Nohara

Kentaro Negai

Masato Nagao

A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate. For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.

Film-forming composition

A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.

Resist underlayer film forming composition having a disulfide structure

A resist underlayer film-forming composition having a dramatically improved crosslinking ability over conventional compositions, and further, a resist underlayer film-forming composition that crosslinks with a component of a resist material, in order to improve the adhesion of a resist underlayer film to a resist pattern. A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of formula (1) and a structural unit of formula (2): (wherein each Ris independently a hydrogen atom or a methyl group; each Ris independently a Calkylene group; Ris a single bond or a methylene group; A is a linear, branched, or cyclic aliphatic group having a carbon atom number of 1 to 12 and optionally having a substituent, or a Caromatic or heterocyclic group optionally having a substituent; and Pr is a protecting group); a crosslinking agent; an organic acid catalyst; and a solvent.

Resist underlayer film-forming composition comprising polymer having structural unit having urea linkage

A resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask, including: a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane includes at least one hydrolyzable silane selected from the group made of hydrolyzable silanes of Formula (1), Formula (2), and Formula (3):  A method for producing a semiconductor device including: forming an organic underlayer film on a semiconductor substrate; applying the resist underlayer film forming composition onto the organic underlayer film and baking the composition to form a resist underlayer film; applying a resist film forming composition onto the resist underlayer film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a resist pattern; and etching in this order.

Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton

There is provided a novel isocyanuric acid derivative having two alkoxyalkyl groups and having a trialkoxysilyl group introduced therein, and a method for producing the isocyanuric acid derivative. An isocyanuric acid derivative of formula (1): wherein Ris a methyl group or an ethyl group; two Rs are each a Calkylene group; and two Rs are each a methyl group, an ethyl group, or a Calkoxyalkyl group, which may be liquid at ambient temperature and ambient pressure.

Isocyanuric acid derivative having alkoxyalkyl groups and method for producing the same

There are provided a novel isocyanurate compound having a glycidyl group as a substituent to be bonded to a nitrogen atom. A monoglycidyl isocyanurate compound of the following Formula (1), (2), or (3). (wherein two Rs are each a Calkyl group, two Rs are each a Calkylene group, two Rs are each a Calkyl group, two Rs are each a Calkylene group, and two Rs are each a Calkyl group).

Monoglycidyl isocyanurate compound and production method therefor

There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100&#xb0; C. to 425&#xb0; C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

High-molecular-weight polysilane and method for producing same

A method of producing a silicon hydride oxide-containing organic solvent (coating solution) is provided with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating or to heat the substrate after coating because the silicon hydride oxide is formed in the coating solution before it is coated. The method includes blowing an oxygen-containing gas through an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride oxide may contain a proportion of (residual Si-H groups)/(Si-H groups before oxidation) of 1 to 40 mol %. The silicon hydride can be obtained by reacting a cyclic silane with a hydrogen halide in the presence of an aluminum halide, and reducing the obtained cyclic halosilane.

Method of producing silicon hydride oxide-containing solvent

A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH), where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiRR)(where Rand Rare each a hydrogen atom, a Calkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiRR)(where Rand Rare each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiRR)with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40&#xb0; C. to 80&#xb0; C. under a reduced pressure of 0 to 30 Torr.

Method for producing cyclic silane using concentration method

Described is a doping technique that forms a stable amorphous silicon film and a stable polycrystalline silicon film at a low temperature and simultaneously that imparts conductivity in an atmospheric pressure environment. A method for producing a compound containing a bond between different elements belonging to Group 4 to Group 15 of the periodic table, the method including: applying, at a low frequency and atmospheric pressure, high voltage to an inside of an electric discharge tube obtained by attaching high-voltage electrodes to a metal tube or an insulator tube or between flat plate electrodes while passing an introduction gas, so as to convert molecules present in the electric discharge tube or between the flat plate electrodes into a plasma; and applying the plasma to substances to be irradiated, the substances to be irradiated being two or more elementary substances or compounds.

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Toyama, Japan

Yuichi Goto