Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kabushiki Kaishi Toshiba

Yuichi Goto

Hiroshi Saito

Ryo Wada

Eiichi Hosomi

Kei Kasai

Tomoko Matsudai

Norio Yasuhara

Hiroshi Mochikawa

Kaori Yoshioka

Fumihiro Nakamichi

Takashi Kamishinbara

Ryo Isoe

Ichiro Nishikawa

A driver circuitry includes first-fifth inverters which have lower withstand voltage, and first-sixth transistors which have higher withstand voltage. In the first transistor, a first voltage is applied to a first end, and a second end is connected to the high withstand voltage element. The second transistor is connected to the first transistor. The second inverter is connected to the first inverter and the first transistor. The third inverter is connected to the first inverter. The third transistor is connected to the second inverter. The fourth transistor is connected to the third transistor. The fifth transistor is connected to the third inverter. The sixth transistor is connected to the fifth transistor. The fourth inverter is connected to the sixth transistor and the second transistor. The fifth inverter is connected to the fourth transistor, the fourth inverter, and the fourth inverter.

Driver circuitry and electronic circuitry

A power conversion device includes a first switch and a second switch connected in series between a positive electrode and a negative electrode of a first power supply. A first node is between the first and second switches. The first node can be connected to a load. A first diode has an anode connected to the first node and a cathode connected to the positive electrode of the first power supply. A third switch is connected between a positive electrode of a second power supply and the positive electrode of the first power supply. A first timer is connected to a gate electrode of the third switch. A first comparator has a first input that is connected to a gate electrode of the first switch, a second input at which a reference voltage can be received, and an output that is connected to the first timer.

Power conversion device

A semiconductor device includes a first transistor and a second transistor connected in series between a first voltage source and a second voltage source. A diode is connected between a gate of the first transistor and the second voltage source. A capacitor is connected to the gate of the first transistor. A first driver is connected to the gate of the first transistor through the capacitor. A second driver is connected to a gate of the second transistor. A threshold voltage of the second transistor is higher than a threshold voltage of the first transistor.

Semiconductor device

In general, according to one embodiment, a semiconductor device includes a device main body, a semiconductor substrate. The device main body includes a semiconductor substrate mounting part and a first conductor provided around the semiconductor substrate mounting part. The semiconductor substrate includes a DC-to-DC converter control circuit having a detector to detect at least one of a current flowing through the first conductor and a voltage supplied to the first conductor. The semiconductor substrate is disposed on the semiconductor substrate mounting part so that the detector comes close to the first conductor.

Semiconductor device and DC-to-DC converter

A DC-DC converter includes a high-side circuit supplied with a power supply voltage and a first internal reference voltage generated by a first regulator. The high-side circuit provides a current to an inductor, which is used for generating an output voltage. The first and second regulators each generate respective internal reference voltages. The second internal reference voltage is provided to a signal processing module, which controls the high side circuit so that the output voltage of the DC-DC converter corresponds to regulated target voltage level. The first and second regulators include a differential circuit comparing voltages and generating a corresponding comparison signal, a transistor for generating the internal reference voltage according to a gate voltage applied to its gate, and a circuit to change the gate voltage to reduce a signal amplitude of the comparison signal.

DC-DC converter

According to one embodiment, a level shift circuit includes first through fourth transistors, a control circuit, and first and second generating circuits. The control circuit outputs a first voltage obtained by level-shifting an input voltage to a first terminal. The first transistor supplies a first electric current to the control circuit for outputting the first voltage to the first terminal. The second transistor increases the first electric current. The first generating circuit generates a first pulse signal for controlling the second transistor. The third transistor supplies a second electric current to the first terminal for generating a second voltage corresponding to a first supply of a low-potential side. The fourth transistor increases the second electric current. The second generating circuit generates a second pulse signal for controlling the fourth transistor.

Level shift circuit and driver circuit

According to one embodiment, the voltage divider circuit divides the output voltage, and generates a feedback voltage. The output voltage switching transistor has one end connected to a feedback voltage side, and operates based on an output voltage switching signal. The first condenser has one end connected to the one end of the output voltage switching transistor, and the other end connected to a control terminal of the output voltage switching transistor.

Power supply apparatus which suprresses output voltage variation

A regulator includes a first transistor, a first bias circuit, a second bias circuit, a differential circuit having second to fifth transistors, and a current mirror circuit. The first transistor outputs an output voltage lower than the input voltage. The first bias circuit generates a first bias voltage lower than a reference voltage. The second bias circuit generates a second bias voltage lower than a feedback voltage relating to the output voltage. The second transistor into which the reference voltage is inputted and the third transistor into which the feedback voltage is inputted are a pair of differential transistors. The fourth transistor is complementarily connected to the second transistor. The fifth transistor is complementarily connected to the third transistor. The differential circuit outputs a comparison signal to the first transistor. The current mirror circuit is connected to the second and third transistors.

Low dropout regulator having differential circuit with X-configuration

According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.

Dielectric isolation substrate and semiconductor device

The regulator has a differential circuit that generates a comparison signal corresponding to the difference between an input voltage and a voltage related to the output voltage, a first transistor that adjusts the output voltage in accordance with the comparison signal, a first current mirror circuit connected to a pair of differential output lines of the differential circuit, a second transistor that amplifies the high frequency signal superposed on the output voltage and sends the amplified signal to one of the differential output lines, a second current source that feeds current for amplifying the high frequency signal to the second transistor, a first capacitor, which accumulates charge therein as a result of the high frequency signal and controls the current flowing to one the pair of differential output lines via the second transistor in accordance with the charge quantity, and a second capacitor connected to the output voltage line.

Regulator

A DC-DC converter has a plurality of DC-DC converting units, a plurality of inductor elements, a plurality of duty detection circuits, and a duty adjustment circuit configured to compare output signals from two detection circuits as each group, and to adjust the duty ratio of the DC-DC converting unit connected to one of the two duty detection circuits based on a result of comparing the output signals so that the duty ratio of the square wave voltage of each group becomes equal.

DC-DC converter and DC-DC conversion method

In general, according to one embodiment, a DC-to-DC converter includes a high-side switch, a low-side switch, a diode, a high-side controller and a low-side controller. The low-side switch is connected in series with the high-side switch. The diode is connected in parallel with the low-side switch. The high-side controller has a detector for detecting a current of the high-side switch and controls the high-side switch to be turned on or off in accordance with an output of the detector. The low-side controller controls the low-side switch to be turned off when the high-side switch is ON and controls the low-side switch to be turned on or off in accordance with a peak value of the output of the detector when the high-side switch is OFF.

DC-to-DC converter with high-side switch and low-side switch

According to one embodiment, a DC-to-DC converter includes a high-side switch, a low-side switch, a high-side controller, and a low-side controller. The low-side switch is connected to the high-side switch in series. The high-side controller is configured to control the high-side switch. The low-side controller includes a first detector and an offset canceller. The first detector is configured to detect a current of the low-side switch. The offset canceller is configured to hold an output of the first detector as an offset voltage when the low-side switch is off and compensate an output of the first detector by the offset voltage when the low-side switch is on. The low-side controller is configured to compare a compensated output of the first detector with a reference voltage and turn off the low-side switch.

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Kanagawa-ken, Japan

Yuichi Goto