Tokyo Electron Limited

Horiba Stec, Co., Ltd.

Yuichi Furuya

Daisuke Toriya

Eiichi Komori

Toshiaki Fujisato

Hiroyuki Mori

Takashi Kakegawa

Tomohisa Kimoto

Masayuki Tanaka

Masamichi Hara

Masakazu Minami

Toru Shimizu

Yuhei Sakaguchi

Kohichi Satoh

Einosuke Tsuda

Masato Araki

Hiroki Sakabe

Hideaki Fujita

A trap device including an exhaust gas introduction pipe configured to allow an exhaust gas to flow and be led out from an outlet; a fin member provided in a position where the fin member faces the outlet and is hit by the exhaust gas led out from the outlet; an exhaust path forming member covering at least a portion of the exhaust gas introduction pipe and including an exhaust path configured to exhaust the exhaust gas such that the exhaust gas is turned back, via the fin member, in an opposite direction to a direction of flow of the exhaust gas in the exhaust gas introduction pipe; and a cooling jacket configured to cool the fin member is provided. The fin member includes a fin extending in the opposite direction to the direction of the flow of the exhaust gas in the exhaust gas introduction pipe.

Trap device and semiconductor manufacturing device

A substrate processing apparatus according to an aspect of the present disclosure is an apparatus that deposits a film on a substrate disposed in a processing chamber, and includes a process gas supply configured to supply, into the processing chamber, a process gas including a source gas and a carrier gas that carries the source gas, a vacuum pump configured to exhaust an interior of the processing chamber, and a purge gas supply configured to supply a purge gas into the vacuum pump. The purge gas includes a first gas that is identical to the carrier gas.

Substrate processing apparatus and substrate processing method

A deposition method performed using a deposition apparatus is provided. The deposition apparatus includes: a source line configured to supply Ru(CO)contained in a raw material container into a chamber; a CO gas line configured to supply a CO gas into the raw material container; a bypass line connecting the source line and the CO gas line, and forming a line that does not pass through the raw material container; and a first valve connected to the source line. The deposition method includes: opening the first valve to supply Ru(CO)and the CO gas from the raw material container through the source line;

Deposition method and deposition apparatus

In order to provide an absorbance analysis apparatus for DCR gas that can measure a concentration of a DCR gas by separating absorbance of the DCR gas alone even in a mixed gas consisting of the DCR gas and CO gas whose absorption spectrum overlaps each other, the absorbance analysis apparatus for DCR gas comprises a DCR filterthat is configured to transmit a light in a first wavenumber domain including an absorbance peak of the DCR gas, a CO filterthat is configured to transmit a light in a second wavenumber domain that is different from the first wavenumber domain, and a DCR gas volume calculatorthat is configured to calculate volume of the DCR gas based on a first absorbance measured by the light transmitted through the DCR filterand a second absorbance measured by the light transmitted through the CO filter

Absorbance analysis apparatus for DCR gas, absorbance analysis method for DCR gas, and absorbance analysis program recording medium on which program for DCR gas is recorded

A film forming apparatus for forming a film on a substrate by transferring a source gas generated from a low-vapor-pressure source to a process container by a carrier gas includes: a source container configured to receive and heat the low-vapor-pressure source; a first gas pipe configured to supply the carrier gas to the source container; a second gas pipe connecting the source container and the process container; a first opening and closing valve provided in the second gas pipe; and a measurement part configured to measure a flow rate of the source gas flowing through the second gas pipe, wherein the second gas pipe is disposed on a central axis of the process container, and wherein the source container is offset with respect to the central axis of the process container.

Film forming apparatus, source supply apparatus, and film forming method

There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

Film-forming apparatus

A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.

Method of controlling substrate processing apparatus, and substrate processing apparatus

A valve device includes: valves configured to control a flow of processing gases supplied to a process vessel; a housing in which first flow paths through which the processing gases flow are formed; a heat diffuser configured to cover the housing and diffuse heat of the housing; a heating part configured to cover the housing covered with the heat diffuser and heat the housing via the heat diffuser; a supply configured to supply a coolant to a second flow path formed between the housing and the heat diffuser; and a controller configure to control the heating part to heat the housing to a first temperature when a predetermined process is performed on a target substrate, and before a start of a cleaning process of the process vessel, control the heating part to stop heating of the housing and control the supply to supply the coolant to the second flow path.

Valve device, processing apparatus, and control method

A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Source material container

A gas treatment apparatus includes: a mounting part of a substrate; a gas diffusion plate of a processing gas; gas dispersion parts forming a diffusion space of the processing gas between the gas dispersion parts and the gas diffusion plate; and a flow path having an upstream side forming a common flow path of the gas dispersion parts and a downstream side connected to each of the gas dispersion parts, lengths from the common flow path to respective of the gas dispersion parts being aligned, wherein centers of the gas dispersion parts are located around a central portion of the diffusion space, and the gas dispersion parts are arranged along first circles with two or more of the gas dispersion parts arranged on each of the first circles and distances from the central portion of the diffusion space to the centers of gas dispersion parts being different from one another.

Growing community of inventors

Nirasaki, Japan

Yuichi Furuya