Oki Electric Industry Co., Ltd.

Yuichi Ashizawa

Shooji Kitazawa

Hitoshi Kokubun

Keiichiro Takeda

A non-volatile semiconductor memory decreases a parasitic current as much as possible without using an electric separation means. This nonvolatile semiconductor storage apparatus has multiple memory cells rows having multiple memory cell transistors M,M,. . . whose gates are connected to word lines WL,, WL,. . . , respectively, and whose sources and drains are serially connected. This non-volatile semiconductor storage apparatus also has multiple column lines SBL,SVL,SVL,SBL,. . . which connect the connection nodes between the sources and drains of the memory cell transistors M,M,. . . in the column direction, a power source line PV,which supplies a prescribed electric potential to these column lines, first and second sense amplifiers which detect the electric potential level of the column lines or a current that flows through the column lines, sense column line selection means SS,SS,SS,SS,and,which connect column lines SBL,and SBL,connected to one terminal of selected memory cell M,and one terminal of selected memory cell M,respectively, to the first and second sense amplifiers A,and A,respectively. In this case, the memory cell M,is separated from the memory cell M,by a prescribed number of memory cells on the same memory cell row. This nonvolatile semiconductor storage apparatus further has power source supply column line selection means DS,DS,DS,DS,. . . which connect the column lines connected to the other terminals of the two selected memory cells to the power source line.

Non-volatile semiconductor memory capable of reducing parasitic current

A fuse-programmable control circuit has a master control circuit with a first fusible link that controls the feeding of power to a fuse-programmable memory. If output of signals from the fuse-programmable memory is not required, the first fusible link is cut. If output of signals from the fuse-programmable memory is required, the first fusible link is left uncut and the fuse-programmable memory is programmed by cutting one fusible link in each of a number of pairs of fusible links. In either case, no current can flow through the fuse-programmable control circuit.

Growing community of inventors

Tokyo, Japan

Yuichi Ashizawa