Mitsubishi Electric Corporation

Yui Nakaoka

Yuji Kawano

Shinichi Hosomi

Takaki Sugino

Hirobumi Matsui

In order to achieve at least one of size reduction and high accuracy by maintaining the reliability of the thermal detection sensor in the thermal detection sensor in the flow state of the fluid to be detected, based on a heat transfer amount from the heating resistor element to the fluid to be detected by heat exchange between the fluid to be detected and the heating resistor element via the flattened film, the thermal type detection sensor for detecting a flow state of the fluid to be detected, and wherein a sidewall covering a sidewall of the heating resistor element and blocking physical contact between the heating resistor element and the flattened film is provided between the heating resistor element and the flattened film, and the sidewall suppresses fluctuation in electric resistance of the heating resistor element due to silicidation of the heating resistor element.

Thermal detection sensor

A pad electrode such that a conductive film is used as the pad electrode in a semiconductor device has an object of preventing Al corrosion and improving Au bonding wire durability. A semiconductor device according to the invention includes a conductive film of Al or having Al as a main component on which a signal processing circuit and a pad electrode portion are formed, a metal film formed on the conductive film, and a protective film formed on the metal film, wherein a metal film region in which atoms derived from the metal film are implanted is formed on a surface of the conductive film exposed by an opening formed in one portion of the protective film and the metal film, and adopted as the pad electrode.

Growing community of inventors

Tokyo, Japan

Yui Nakaoka