Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Yuhzoh Tsuda

Shigetoshi Ito

Takayuki Yuasa

Mototaka Taneya

Yoshihiro Ueta

Masahiro Araki

Atsushi Ogawa

Teruyoshi Takakura

Takeshi Kamikawa

Kensaku Motoki

Seiki Yano

Yoshihiko Tani

Masaya Ishida

Daisuke Hanaoka

Yoshimi Tanimoto

Masataka Ohta

Yoshie Fujishiro

Toshiyuki Okumura

Yukio Yamasaki

Satoshi Komada

Pablo Vaccaro

Akinori Noguchi

Kouichi Morishige

Shingetoshi Ito

A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

Nitride semiconductor laser device and semiconductor laser apparatus

In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.

Semiconductor laser device

A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.

Nitride semiconductor laser device

A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 &#x3bc;m; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 &#x3bc;m; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method

A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated regionand a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3&#xb0; to 0.7&#xb0; relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus

A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.

Nitride semiconductor laser device and method of producing the same

A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.

Nitride semiconductor light emitting device

A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a &#x3c;0001&#x3e; direction by an angle which is equal to or greater than about 0.05&#xb0; and which is equal to or less than about 2&#xb0;, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.

Nitride compound semiconductor light emitting device and method for producing the same

A nitride semiconductor laser device includes a nitride semiconductor laser element having a resonator end surface and capable of emitting light with a wavelength of at most 420 nm, a heat sink joined to the nitride semiconductor laser element, a stem with the heat sink mounted thereon, and a light detecting element mounted on the stem for detecting a laser beam from the nitride semiconductor laser element. The nitride semiconductor laser element, the heat sink and the light detecting element are enclosed within a cap that is joined to the stem, and an atmosphere within the cap has a dew point of at most &#x2212;30&#xb0; C. and an oxygen concentration of at most 100 ppm.

A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.

Growing community of inventors

Sakurai, Japan

Yuhzoh Tsuda