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Bp Amoco Corporation

Yuhua Du

Robert B Wilson

Cheng-Jye Chu

Qin Jang

David Bomberger

Wei Qiang

A dielectric film comprising silicon, oxygen and carbon having a low dielectric constant, superior thermal stability and adhesion to commonly employed semiconductor materials is described. The film is formed from a polyorganosilane polymer applied to a substrate and subsequently cured in a two-step or three-step cure process. The film is advantageously suited for, among other things, damascene, double damascene and interlayer dielectric applications.

Low dielectric constant film and method thereof

A method for converting �MoCp(CO).sub.3 !.sub.2, in which at least one of the Cp groups has a substitutent having a carbonyl or carboxyl group and the compound has a Mo--Mo single bond, into a resinous supported material having repeating units of the formula (MoCp).sub.2 S.sub.4. The repeating units have four bridging sulfido ligands between the two molybdenum atoms, and the repeating units are joined to each other by bridging-sulfide ligands. The method comprises reacting the molybdenum carbonyl dimer with elemental sulfur in a solvent for the starting material at a temperature between 110-120.degree. C. in the presence of a solid adsorbent support. The resinous material may be further hydrogenated, the hydrogenated material may be further reacted to form a material having a carboxyl-containing methanedithiolate ligand, and this latter material may be further hydrolyzed. The molybdenum sulfide dimers are useful for separation, purification, and recovery of unsaturated hydrocarbons.

Process for synthesis of molybdenum sulfide dimers

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Reseda, CA, United States of America

Yuhua Du