Boe Technology Group Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Yunding Network Technology (beijing) Co., Ltd.

Yuhu Zhang

Kui Gong

Wei Sun

Li Li

Honggang Gu

Hao Tang

Xiaobo Liu

Lifeng Liu

Guoliang Li

Hongwei Wang

Lei Yu

Dezhi Xu

Wei Tian

Qi Yi

Huasheng Liu

Wentong Huang

Yu Jin

Hao Yue

Qi Su

Junmao Wang

Bin Nie

Huazhang Ma

Dai Zheng

Ru Xu

The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.

Transistor device, manufacturing method thereof, display substrate and display device

The present disclosure relates to a method and system for controlling a smart device. The method may include obtaining correlating information of the smart device. The correlating information may include at least one of smart device information or a communication status of the smart device. The method may include determining indication information of the smart device by processing the correlating information of the smart device according to a preset algorithm. The method may include performing designated operations related to the smart device based at least in part on the indication information.

Methods and systems for controlling an intelligent device

Disclosed is a method of preparing a thin film transistor substrate, a thin film transistor substrate, and a display apparatus. The method includes forming a conductive material layer, forming a hydrophobic insulation layer on the conductive material layer, forming a photoresist layer on the hydrophobic insulation layer, patterning the photoresist layer to form a photoresist pattern, removing a segment in the hydrophobic insulation layer that is not covered by the photoresist pattern to form a hydrophobic insulation pattern, and removing a segment in the conductive material layer that is not covered by the hydrophobic insulation pattern to form a conductive pattern.

Method of preparing thin film transistor substrate

A substrate lift bar includes: an outer lift bar which is in shape of a box structure and includes one surface having an opening; an inner lift bar which is able to be accommodated in the outer lift bar and includes a supporting surface used for supporting a substrate; an elevator structure for controlling the inner lift bar to move up and down to change from a first state to a second state and back again; and an anti-static liquid smearing structure for smearing an anti-static liquid onto the inner lift bar if the inner lift bar is in the first state. In the first state, the inner lift bar is completely located inside the outer lift bar, and in the second state, the supporting surface of the inner lift bar is substantially flush with the surface having the opening of the outer lift bar.

Substrate lift bar and method for smearing anti-static liquid

Embodiments of the present disclosure disclose an overlay key including at least two overlay marks each having a first sub-mark and a second sub-mark centro-symmetrical to each other, the first sub-mark and the second sub-mark each including two bar patterns that are perpendicular to each other and have a common end. At least two of the overlay marks are located in different layers. Also disclosed is a method of forming the overlay key and a method of measuring overlay accuracy.

Overlay key, method of forming the same, and method of measuring overlay accuracy

Growing community of inventors

Beijing, China

Yuhu Zhang