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Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Alcan-Tech Co., Inc.

Semiconductor Process Laboratory

Semiconductor Process Co., Ltd.

Yuhko Nishimoto

Kazuo Maeda

Yoshimi Shioya

Tomomi Suzuki

Hiroshi Ikakura

Kouichi Ohira

Noboru Tokumasu

Shoji Ohgawara

Setsu Suzuki

A semiconductor device is manufactured by the steps of generating a film forming gas by setting a flow rate ratio of HO to any one of a silicon-contained organic compound having a siloxane bond and a silicon-contained organic compound having a CHgroup to 4 or more and adjusting a gas pressure to 1.5 Torr or more, applying a power to the film forming gas to generate a plasma thereof so as to react it, and thus forming a low-dielectric insulating film () on a substrate (), plasmanizing a process gas containing at least any one of He, Ar, Hor deuterium, and bringing the low-dielectric insulating film () into contact with the plasma of the process gas.

Semiconductor device and process for producing the same

The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

Semiconductor device and method of manufacturing the same

A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF gas, a C F gas and a NF gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a f&Agrave;-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (C H ), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (C H ), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

Semiconductor device manufacturing method

The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film on a substrate subject to deposition, in which an electric power having a first frequency (f ) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film having low relative dielectric constant on the barrier insulating film , in which an electric power having a second frequency (f ) higher than the first frequency (f ) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

Manufacturing method of semiconductor device

This invention relates to a method of film formation in which, when a silicon oxide film (a NSG film: a Non-doped Silicate Glass) is formed on a substrate having a recess by a CVD method using a mixed gas containing TEOS and ozone, surface dependency on the substrate is eliminated to embed a silicon oxide film into the recess of the surface. The invention includes forming a phosphorus containing insulating film as a base layer on the surface of a substrate and forming a silicon-containing insulating film on the phosphosilicate glass film by the chemical vapor deposition method, using a mixture of a ozone-containing gas and a silicon-containing gas.

Method of film formation and method for manufacturing semiconductor device

This invention is directed to a method for reforming an undercoating surface prior to the formation of a film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. It effects the reform of the surface by forming an undercoating insulating film on a substrate prior to the formation of film and exposing the surface of the undercoating insulating film to plasma gas.

Method for reforming undercoating surface and method for production of semiconductor device

The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

Substrate holder and reaction apparatus

This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

Growing community of inventors

Tokyo, Japan

Yuhko Nishimoto