Taiwan Semiconductor Manufacturing Comp. Ltd.

Yuhi-Jier Mii

Harry-Hak-Lay Chuang

Bao-Ru Young

Kuei Shun Chen

Tsung-Chieh Tsai

George Liu

Cheng Cheng Kuo

Methods of forming a semiconductor structure and the semiconductor structure are disclosed. In one embodiment, a method includes forming a gate dielectric layer over a substrate, forming a gate electrode layer over the gate dielectric layer, and etching the gate electrode layer and the gate dielectric layer to form a horizontal gate structure and a vertical gate structure, wherein the horizontal gate structure and the vertical gate structure are connected by an interconnection portion. The method further includes forming a photoresist covering the horizontal gate structure and the vertical gate structure, with the photoresist having a gap exposing the interconnection portion between the horizontal gate structure and the vertical gate structure, and then etching the interconnection portion.

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Hsin-Chu, Taiwan

Yuhi-Jier Mii