Sun Harmonics, Ltd.

Other

Yuhang Ren

Kai Shum

Zhuo Chen

Jin Zhang

Paifeng Luo

Chivin Sun

Bo Gao

Zhi Huang

Yizhi Li

Chunhui Yu

This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in an organic Perovskite precursor solvent. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

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This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI) films. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

A method of preparing Cu(In,Ga)SSeCu(In,Ga) (S,Se)(CIGSS) absorber layers uses coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGSS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks

This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnIfilms on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnIfilms are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI). More specifically, the CsSnIis fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnIare ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.

Ternary and quaternary Chalcopyrite CuInGaSSe(CIGS, where 0&#x2266;x and y&#x2266;1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150&#xb0; C. to 190&#xb0; C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.

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Secaucus, NJ, United States of America

Yuhang Ren