Advanced Semiconductor Engineering, Inc.

Yuh-Shan Su

Wen Hung Huang

Chih-Cheng Lee

Hsing Kuo Tien

Chien-Mei Huang

Shih-Yu Wang

I-Ting Lin

Min Lung Huang

A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Semiconductor device package including stress buffering layer

A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.

Semiconductor device package having an antenna formed over a foaming agent filled cavity in a support layer

Semiconductor device package with stress buffering layer and method for manufacturing the same

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Kaohsiung, Taiwan

Yuh-Shan Su