Other

Yuh-Min Lin

Liang-Gi Yao

Hung-Chuan Chen

Shih-Chieh Su

A short period of low power plasma-activated process is imposed after film-forming to remove residual chemical compound. This method includes flowing one or more carrier gases with one or more reaction gases into the chamber, reducing plasma power to react the residual chemical compound with the reaction gases, and pumping to evacuate reaction product from the reaction chamber. The reduced plasma can be achieved by increasing gap spacing at a constant power or gradient power. Alternatively, it can be obtained by keeping the same spacing as the main process with a small power source.

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Kaohsiung, Taiwan

Yuh-Min Lin