Vishay Intertechnology, Inc.

Vishay Semiconductor Gmbh

Capella Microsystems Inc.

Capella Microsystems (taiwan), Inc.

Other

Tubis Technology Inc.

Analogtek Corp.

Yuh-Min Lin

Koon-Wing Tsang

Cheng-Chung Shih

James Han Wang

Koon Wing Tsang

Jia Yang Koo

Kun-You Lin

Jinn-Ann Kuo

Yu-Hao Kao

Yao-Tsung Tsai

Wenbo Liang

An optoelectronic device is disclosed, comprising: a photodiode array including a plurality of first photodiodes, each first photodiode including a respective n+ region and a respective n-well region; a guide array disposed over the photodiode array, the guide array including a plurality of guide members separated from one another by a layer of light-blocking material, the guide members being aligned with the n+ regions of the first photodiodes, such that each guide member is disposed over a different respective n+ region, and the layer of light-blocking material being aligned with the n-well regions of the first photodiodes; and a filter array disposed over the guide array, the filter array including a plurality of bandpass filters, each bandpass filter being aligned with a different one of the plurality of guide members, each bandpass filter having a different transmission band.

Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and n-well regions

Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Light level sensor for device with display

Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.

Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and N-well regions

A gate bias circuit for a plurality of GaAs amplifier stages is a transistor coupled to a temperature compensation current received from a CMOS control stage. A plurality of pHEMPT amplifier stages are coupled to the gate bias circuit and to a control voltage which switches the amplifier stage. A selectively controlled stage pass transistor enables a current mirror between the gate bias circuit and each stage amplifying transistor. The penultimate pHEMPT amplifier stage is coupled to a CMOS amplifier. A CMOS circuit provides both the temperature compensation current by a proportional to absolute temperature (PTAT) circuit and the control voltage enabling each pHEMPT transistor to receive its input signal in combination with the gate bias voltage.

Multiplexed multi-stage low noise amplifier uses gallium arsenide and CMOS dice

Multiplexed multi-stage low noise amplifier uses gallium arsenide and CMOS dies

An optical sensor system is disclosed. The optical sensor system comprises a panel and a sensing unit. The panel comprises a plurality of transparent areas. The sensing unit locates at one side of the panel and the sensing unit senses a plurality of first light signals reflected by an object and senses a plurality second light signals of an ambient light. The reflected first light signals and the second light signals pass through one of the plurality of transparent areas of the panel. The sensing unit further comprises a light sensor and a plurality of gesture sensors. The light sensor locates at the center of the sensing unit, and the light sensor senses the second light signals. The plurality of gesture sensors surrounds the light sensor, and the gesture sensors senses the reflected first light signals and then produce gesture signals corresponding to motions of the object.

Optical sensor system

A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and includes two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers comprising first shielding layers and second shielding layers are deposited in the insulation layer in parallel in a horizontal direction, and the first shielding layers are arranged for correspondingly covering the two conducting regions, the second shielding layers are arranged for correspondingly covering the at least one of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer.

Photo-coupler device

The present invention discloses a Micro-Electro-Mechanical Systems (MEMS) capacitive sensing circuit wherein two input nodes of a fully differential amplifier are separately connected to a MEMS capacitive sensing device and a matching capacitor, which both contain similar capacity value and connect to a bias node, and two resistors separately connect the MEMS capacitive sensing device and the matching capacitor to ground (zero voltage). Thus, the present invention could effectively eliminate the bias noise in the circuit without any discrete capacitor and capable for designer to integrate all circuit devices into an IC.

Micro-electro-mechanical systems (MEMS) capacitive sensing circuit

A light emitting apparatus comprises a light emitting element and a switching converter comprising a conversion circuit for converting an operating electric signal to generate the driving electric signal, a feedback circuit having a light detecting element for detecting a luminous intensity of the light emitting element and generating a feedback signal, and a control circuit for receiving the feedback signal, comparing the received feedback signal with a reference electric signal, and controlling the conversion circuit based on comparison results to adjust the driving electric signal. Alternatively, the light detecting element detects ambient light and the control circuit controls the conversion circuit based on comparison results to stop or enable outputting of the driving electric signal.

Switching converter for lighting with light intensity as feedback and light emitting apparatus using the same

The ambient light sensor structure includes a power supply, a converter, and a pulse processing unit. The power supply provides a reference voltage interface, a high voltage interface and a low voltage interface. The converter includes a first current-to-pulse converter, a second current-to-pulse converter, a first light sensor and a second light sensor. The pulse processing unit comprises a signal subtraction component for circuit blocking, a counter, a digital-to-analog converter and a buffer by series connection. Without incident light, two light sensors would produce a dark current due to the material characteristics of the two photo diodes. Therefore, two current to pulse converters convert the dark current into a pulse signal and transmit the pulse signal to the signal subtraction component in order to cancel the dark current. By the method mentioned above, the dark current caused by the material characteristic of the two light sensors can be eliminated.

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San Ramon, CA, United States of America

Yuh-Min Lin