Samsung Electronics Co., Ltd.

Yugyun Shin

Sangjin Hyun

Hoonjoo Na

Hye-Lan Lee

Hyung-seok Hong

Hagju Cho

Hyung-Seok Hong

Hongbae Park

Sughun Hong

Yong-Hoon Son

Kang-Ill Seo

Hyosan Lee

Jongwook Lee

Siyoung Choi

Sungkwan Kang

Jun-Woong Park

A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.

Semiconductor device and method of fabricating the same

Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific element to the gate dielectric layer; forming a product though reacting the specific element with at least one of the plurality of elements; and removing the product.

Semiconductor devices and methods of forming the same

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.

Methods of forming semiconductor devices

In some methods of fabricating a silicon-on-insulator substrate, a semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A first insulating film is formed on the defined region of the semiconductor substrate with an opening that exposes a portion of the defined region of the semiconductor substrate having the single crystalline structure. A first non-single crystalline film is formed on the exposed portion of the semiconductor substrate and that at least substantially fills the opening in the first insulating film. A laser beam is generated that heats the first non-single crystalline film to change the first non-single crystalline film into a first single crystalline film having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

Methods of fabricating silicon-on-insulator substrates having a laser-formed single crystalline film

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Seoul, South Korea

Yugyun Shin