Texas Instruments Corporation

YuGuo Wang

Tathagata Chatterjee

Jerry Doorenbos

Rajni J Aggarwal

Steven Loveless

Robert Christopher Bowen

Weidong Tian

Srinivas Kumar Pulijala

Bharath Karthik Vasan

Siva Kumar Sudani

Zachary Ka Fai Lee

Robert Stanley Grondalski

In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The device also includes an anode of the diode formed by a P-doped region, the P-doped region spaced away from the N-doped region in the P-doped well. The device includes a deep N-type buried layer (DNBL) formed in the semiconductor substrate, the P-doped well formed between the top surface and the DNBL. The device also includes an N-doped well extending from the top surface to the DNBL.

Ultra-low leakage diodes used for low input bias current

A system comprises a noise generator circuit and a noise envelope detector circuit. The noise generator circuit comprises a first amplifier including a single transistor pair that is operable to generate 1/f noise, an output amplifier coupled to the first amplifier and configured to generate a 1/f noise signal as a function of the 1/f noise. The noise envelope detector circuit comprises a low pass filter operable to pass low frequency signals of the 1/f noise signal as a filtered 1/f noise signal, and a second amplifier or a comparator coupled to the low pass filter and operable to output a direct current (DC) voltage signal according to an envelope of the filtered 1/f noise signal, where the DC voltage signal is a function of an envelope of the filtered 1/f noise signal.

Direct current measurement of 1/f transistor noise

A semiconductor device includes a Silicon-on-Insulator (SOI) substrate including a top device layer, a buried oxide (BOX) layer, and a bottom handle portion. A filled trench is lined with a trench dielectric layer that extends to at least the BOX layer, defining an inner and an outer portion of the device layer. A field effect transistor (FET) includes an inner portion, a source region having a source contact thereto and a drain region having a drain contact thereto, each doped a first doping type. A gate region has a gate contact that is separated from the inner portion by the trench dielectric. The source and drain region are separated by a body region doped a second doping type having a body contact.

FET using trench isolation as the gate dielectric

An analog-to-digital converter (ADC) comprising successive approximation circuitry, a capacitive analog-to-digital converter (CDAC), and capacitor mismatch measurement circuitry. The successive approximation circuitry is configured to control conversion of an analog signal to a digital value. The CDAC is coupled to the successive approximation circuitry. The CDAC includes a plurality of capacitors. The capacitor mismatch measurement circuitry is coupled to the CDAC. The capacitor mismatch measurement circuitry includes a first oscillator circuit, a second oscillator circuit, and counter circuitry. The first oscillator circuit is configured to oscillate at a frequency determined by a capacitance of one of the capacitors. The second oscillator circuit is configured to generate a predetermined time interval. The counter circuitry is configured to count a number of cycles of oscillation of the first oscillator in the predetermined time interval.

Capacitive mismatch measurement

An integrated circuit includes an NMOS transistor, a PMOS transistor and a vertical bipolar transistor. The vertical bipolar transistor has an intrinsic base with a band barrier at least 25 meV high at a surface boundary of the intrinsic base, except at an emitter-base junction with an emitter, and except at a base-collector junction with a collector. The intrinsic base may be laterally surrounded by an extrinsic base with a higher dopant density than the intrinsic base, wherein a higher dopant density provides the band barrier at lateral surfaces of the intrinsic base. A gate may be disposed on a gate dielectric layer over a top surface boundary of the intrinsic base adjacent to the emitter. The gate is configured to accumulate the intrinsic base immediately under the gate dielectric layer, providing the band barrier at the top surface boundary of the intrinsic base.

Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers

A serpentine double gated diode array for monitoring stress induced defects is disclosed. The diode array is configured with adjacent gate segments and gate loops in close proximity to active areas to maximize a sensitivity to stress induced defects. The diode array is compatible with conventional electrical testing. Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) may be used to isolate individual stress induced defects. Variations in the gate configuration allow estimation of effects of circuit layout on formation of stress induced defects.

Electrical test structure to detect stress induced defects using diodes

In the present invention, a PMOS device comprises a channel region formed in {100} silicon with first and second source/drain region disposed on either side of the channel region. The channel region is oriented such that a current flow between the source/drain regions has a &#x3c;100&#x3e; direction through the channel region. Dielectric regions create a compressive stress on the channel region perpendicular to the current flow.

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Plano, TX, United States of America

YuGuo Wang