Shin-Etsu Chemical Co., Ltd.

Yugo Taniguchi

Noriaki Hamaya

Ryo Iwasaki

Toshihiko Tsukatani

According to the present invention, a yttrium-fluoride-based sprayed coating that has a Vickers hardness of 350 or higher, includes a YFcrystal phase having an orthorhombic crystal system, and does not include a YFcrystal phase having a crystal system other than an orthorhombic crystal system is produced by plasma-spraying a spray powder that includes a YFcrystal phase having an orthorhombic crystal system and does not include a YFcrystal phase having a crystal system other than an orthorhombic crystal system. In the present invention, it is possible to provide a yttrium-fluoride-based sprayed coating that has a high coating hardness and is such that the amount of particles generated upon exposure to a halogen-based gas plasma is low, and such a sprayed coating is exceptional as a sprayed coating formed on a member for a semiconductor-producing device that is used in a semiconductor production step.

Yttrium-fluoride-based sprayed coating, sprayed member, and method for producing yttrium-fluoride-based sprayed coating

A spraying material comprising a rare earth (R), aluminum and oxygen, the spraying material being a powder and comprising a crystalline phase of a rare earth (R) aluminum monoclinic (RAlO) and a crystalline phase of a rare earth oxide (RO), with respect to diffraction peaks detected within a diffraction angle 2θ range from 10° to 70° by a X-ray diffraction method using the characteristic X-ray of Cu-Kα, the spraying material having diffraction peaks attributed to the rare earth oxide (RO) and diffraction peaks attributed to the rare earth (R) aluminum monoclinic (RAlO), and an intensity ratio I(R)/I(RAL) of an integral intensity I(R) of the maximum diffraction peak attributed to the rare earth oxide (RO) to an integral intensity I(RAL) of the maximum diffraction peak attributed to the rare earth aluminum monoclinic (RAlO) being at least 1.

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Echizen, Japan

Yugo Taniguchi