Qualcomm Incorporated

Yufei Wu

Periannan Chidambaram

Ravi Pramod Kumar Vedula

Mishel Matloubian

Hyunchul Jung

A complementary metal oxide semiconductor (CMOS) integrated humidity sensor with built-in heater is disclosed. In an aspect, a capacitive humidity sensor comprises a substrate and a plurality of unit humidity sensors disposed above the substrate. Each unit humidity sensor comprises a resistive heating structure disposed above the substrate, a plurality of capacitive humidity sensors disposed above the resistive heating structure and set apart from each other in a vertical direction, and a top surface at least a portion of which is water-permeable. Each capacitive humidity sensor comprises a pair of interdigitated vertical metal plates extending in a first direction, set apart from each other in a second direction orthogonal to the first direction, and separated from each other by a moisture-sensitive dielectric disposed between the pair of interdigitated vertical metal plates. At least one capacitive humidity sensor uses a different moisture-sensitive dielectric than another capacitive humidity sensor.

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San Diego, CA, United States of America

Yufei Wu