Apple Inc.

Yuewei Zhang

Paul Stephen Drzaic

Lei Zhang

Lina He

Fang Ou

Dmitry S Sizov

Xiaobin Xin

Nathaniel T Lawrence

Ranojoy Bose

Wei Hsin Yao

Display structures and methods of operation with micro light emitting diode (LED) sidewall gating are described. In an embodiment, a display structure includes a vertically oriented micro LED mounted on a display substrate, in which the micro LED includes a p-n diode with top and bottom electrode sides, and a sidewall gate electrode spanning a sidewall of the p-n diode where the active layer is included. In various embodiments, a bias may be applied to the sidewall gate electrode while driving the micro LED to deplete a minority carrier concentration from the sidewall of the p-n diode.

Active / passive control of micro LED performance through sidewall gating

Methods and structures are described to facilitate the transfer of device layer coupons with controlled vertical position. In an embodiment, a plurality of device layer coupons is bonded to a receiving substrate with an adhesive layer, where distance between front surfaces of the plurality of device layer coupons and a bulk layer of the receiving substrate is controlled by a plurality of rigid mechanical spacers.

Methods for die-to-wafer device layer transfer with precise control of device layer vertical position

Optical components such as components that emit light and components that detect light may be provided. Optical components that emit light may include displays having arrays of display pixels with respective light-emitting devices such as crystalline semiconductor light-emitting diodes. Optical components that detect light may include image sensors or other components with arrays of photodetectors. The light-emitting devices and photodetectors in the optical components may be overlapped by metalenses such as multielement metalenses. A multielement metalens may have a first metalens element formed from a first layer of nanostructures arranged and an overlapping second metalens element formed from a second layer of nanostructures. Light sources may be provided on a semiconductor and metalens nanostructures may be formed on an opposing surface of the semiconductor.

Electronic device with stacked metasurface lenses

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Santa Barbara, CA, United States of America

Yuewei Zhang