Yangtze Memory Technologies Co., Ltd.

Yueping Li

Haibo Li

Chao Zhang

Chunyuan Hou

Ke Liang

Chun Yuan Hou

Jiawei Chen

Yi Gu

Lu Liao

Mei Wang

In certain aspects, a memory device includes a memory cell array having rows of memory cells, word lines respectively coupled to the rows of memory cells, and a peripheral circuit coupled to the memory cell array through the word lines. Each memory cell is configured to store a piece of N-bits data in one of 2levels, where N is an integer greater than 1. The level corresponds to one of 2pieces of N-bits data. The peripheral circuit is configured to program, in a first pass, a target memory cell of the memory cells into one of x intermediate levels based on all pages of N pages of the piece of N-bits data to be stored in the target memory cell, where x is an integer smaller than 2. The peripheral circuit is also configured to program, in a second pass after the first pass, the target memory cell into one of the 2levels based on all pages of the N pages of the piece of N-bits data to be stored in the target memory cell.

Memory device and multi-pass program operation thereof

In certain aspects, a memory device includes a memory cell array having rows of memory cells, word lines respectively coupled to the rows of memory cells, and a peripheral circuit coupled to the memory cell array through the word lines. Each memory cell is configured to store a piece of N-bits data in one of 2levels, where N is an integer greater than 1. The level corresponds to one of 2pieces of N-bits data. The peripheral circuit is configured to program, in a first pass, a row of target memory cells, such that each of the row of target memory cells is programmed into one of 2/m intermediate levels based on the piece of N-bits data to be stored in the target memory cell, where m is an integer greater than 1. The peripheral circuit is also configured to program, in a second pass after the first pass, the row of target memory cells, such that each target memory cell is programmed into one of the 2levels based on the piece of N-bits data to be stored in the target memory cell.

In certain aspects, a memory device includes a memory cell array having rows of memory cells, word lines respectively coupled to the rows of memory cells, and a peripheral circuit coupled to the memory cell array through the word lines. The peripheral circuit is configured to program a row of memory cells using a first program voltage and verify the programmed row of memory cells using a verify voltage and a sample voltage smaller than the verify voltage. The peripheral circuit is also configured to obtain a first number of memory cells of the programmed row of memory cells based on the sample voltage. The peripheral circuit is further configured to predict, based on the first number of memory cells and the sample voltage, a second number of memory cells of the programmed row of memory cells that fail to pass the verification.

Memory device and program operation thereof

A function equivalence check method includes receiving a cell list, receiving an analog constraint of a cell in the cell list, generating the full-coverage input stimuli according to the analog constraint, performing a behavioral-level simulation using the full-coverage input stimuli and according to the behavioral code to generate a behavioral-level simulation result, performing a circuit-level simulation using the full-coverage input stimuli and according to the circuit-level netlist to generate a circuit-level simulation result, and comparing the behavioral-level simulation result and the circuit-level simulation result to generate a comparison report for an analog value auto-comparison.

Simulation method for use in functional equivalence check

An integration method for a 3D NAND flash memory device includes disposing a plurality of 3D triple-level cell (TLC) NAND flash memories on a CMOS die; disposing at least a NOR Flash memory on the CMOS die of the 3D NAND flash memory device; and connecting the at least a NOR Flash memory to an Open NAND Flash Interface (ONFI) of the 3D NAND flash memory device; wherein the at least a NOR Flash memory is disposed on an unused area of the CMOS die.

Growing community of inventors

Wuhan, China

Yueping Li