Southern University of Science and Technology

Shenzhen Xiuyi Investment Development Partnership (limited Partnership)

Yuejin Guo

Guobiao Zhang

Hongyu Yu

Shengming Zhou

Wang Zhang

Guoxing Zhang

Yida Li

Guangzhao Liu

Mingtao Hu

Kai Chen

Junjun Liu

Jun Lan

Xiaodong Xiang

Edward Prack

Mei Shen

Chuan Hu

Yingqiang Yan

Yingjun Pi

A fan-out packaging method includes: prepare circuit patterns on one side or both sides of a substrate; install electronic parts on one side or both sides of the substrate; prepare packaging layers on both sides of the substrate; the packaging layers on both sides of the substrate package the substrate, the circuit patterns, and the electronic parts, the packaging layers being made of a thermal-plastic material; wherein the substrate is provided with a via hole; both sides of the substrate are communicated by means of the via hole; a part of the packaging layers penetrate through the via hole when the packaging layers are prepared on both sides of the substrate; and the packaging layers on both sides of the substrate are connected by means of the via hole.

Fan-out packaging method and fan-out packaging plate

A method for making a three-dimensional (3-D) module includes the steps of: A) forming a laminate of alternate ceramic tape layers and internal electrode layers on a substrate; B) etching said laminate to form first and second capacitor stacks at said first and second locations; C) firing said first and second capacitor stacks integrally; D) forming first and second pairs of external electrodes on said first and second capacitor stacks, respectively.

Methods for making three-dimensional module

A three-dimensional (3-D) module with integrated passive components includes a plurality of vertically stacked sub-modules. Each sub-module comprises a device level comprising a high-k dielectric (e.g. ceramic) material and an interconnect level comprising a low-k dielectric (e.g. organic) material. The passive components in the device level are fired integrally, whereas the device level and the interconnect level are fired independently.

Three-dimensional module with integrated passive components

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)

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Shenzhen, China

Yuejin Guo