Micron Technology Incorporated

Yueh-Hung Chen

Jiangli Zhu

Chih-Kuo Kao

Fangfang Zhu

Ying Yu Tai

Horia Cristian Simionescu

Seungjune Jeon

Juane Li

Disclosed is a system comprising a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying a group of memory cells corresponding to a first range of logical block addresses (LBAs). The operations performed by the processing device further include receiving a memory access command with respect to the group of memory cells. The operations performed by the processing device further include responsive to determining that a data structure associated with the group of memory cells references a second range of LBAs, blocking the memory access command; responsive to determining that the first range of LBAs does not include each LBA of the second range of LBAs, performing, on the group of memory cells, a trim operation; and responsive to determining that the data structure indicates the completion of the trim operation, performing a memory access operation specified by the memory access command.

Managing trim commands in a memory sub-system

Methods, systems, and devices for one or more clock domain crossing queues are described. A queue can receive, from a first clock domain, a first command to store data in the queue. The queue can store the data at a first location indicated by a first pointer. The queue can receive, from the first clock domain, a second command to cause the second clock domain to retrieve the data from the queue. The queue can generate, based on receiving the second command, a third command synchronized with a clock of the second clock domain and to cause the second clock domain to retrieve the data. The queue can retrieve the data from the first location in the queue indicated by a second pointer associated with retrieving data based at least in part on generating the third command. The queue can transmit, to the second clock domain, the data.

Clock domain crossing queue

Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include receiving, by the processing device, a trim command on the memory device, wherein the trim command references a range of logical block addresses (LBAs). The operations performed by the processing device further include identifying a group of memory cells corresponding to the range of LBAs, wherein the group of memory cells comprises one or more management units (MUs). The operations performed by the processing device further include updating a data structure associated with the group of memory cells to reference the request; receiving a memory access command with respect to the group of memory cells. The operations performed by the processing device further include responsive to determining that the data structure associated with the group of memory cells references the trim command, blocking the memory access command; performing, on the group of memory cells, a trim operation specified by the trim command; updating the data structure to indicate the completion of the trim operation; and responsive to determining that the data structure indicates the completion of the trim operation, performing a memory access operation specified by the memory access command.

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising generating a super management unit (SMU) memory access command; splitting the SMU memory access command into a plurality of management unit (MU) memory access commands; indexing, in an index data structure, each MU memory access command of the plurality of MU memory access commands; issuing, to the memory device, a sequence of MU memory access commands from the plurality of MU memory access commands; receiving an indication that a MU memory access command from the sequence of MU memory access commands is completed; and responsive to determining that the completed MU memory access command satisfies a criterion, issuing an available MU memory access command based on an index value of the available MU memory access command.

Management unit based media management operations in memory devices

A request is received to program host data to a memory device of a memory sub-system. The host data is associated with a logical address. A redundancy factor that corresponds to the logical address associated with the host data is obtained. A first physical address associated with a first set of cells of the memory device and a second physical address associated with a second set of cells of the memory device are determined based on the redundancy factor. The first set of memory cells is to store the host data and the second set of memory cells is to store redundancy metadata associated with the host data. The host data is programmed to the first set of memory cells. The redundancy metadata associated with the host data is programmed to the second set of memory cells.

Redundancy metadata media management at a memory sub-system

A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising receiving an indication that a first memory access operation performed in response to a first memory access command is complete, wherein the first memory access operation is associated with a first CAM entry comprising an identifier of a second CAM entry; identifying the second CAM entry using the indicator, wherein the second CAM entry references a second memory access command; and issuing, to the memory device, the second memory access command.

Dual-address command management using content addressable memory

A memory system includes a memory device and a processing device operatively coupled with the memory device. The processing device perform operations comprising: responsive to receiving a memory access command, determining that the memory access command is a dual-address command comprising a source address and a destination address; generating a first content addressable memory (CAM) entry associated with a read command of the dual-address command, wherein the first CAM entry references the source address; generating a second CAM entry associated with a write command of the dual-address command, wherein the second CAM entry references the destination address; inserting the first CAM entry and the second CAM entry into a CAM; and issuing, to the memory device, the read command associated with the first CAM entry.

Growing community of inventors

Sunnyvale, CA, United States of America

Yueh-Hung Chen