Macronix International Co., Ltd.

Yueh-Han Wu

Tei-Wei Kuo

Yuan-Hao Chang

Hung-Sheng Chang

Han-Wen Hu

Tse-Yuan Wang

A computing in memory method for a memory device is provided. The computing in memory method includes: based on a stride parameter, unfolding a kernel into a plurality of sub-kernels and a plurality of complement sub-kernels; based on the sub-kernels and the complement sub-kernels, writing a plurality of weights into a plurality of target memory cells of a memory array of the memory device; inputting an input data into a selected word line of the memory array; performing a stride operation in the memory array; temporarily storing a plurality of partial sums; and summing the stored partial sums into a stride operation result when all operation cycles are completed.

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Taipei, Taiwan

Yueh-Han Wu