Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Yuedi He

Yanzhao Li

Guoqiang Tang

Zhuo Chen

Haijun Qiu

Jie Sun

Boris Kristal

Yang Wang

Benlian Wang

Long Wang

Zhenhua Zhang

Yingsong Xu

Yangpeng Wang

Weinan Dai

Feng Jiang

Jingyi Feng

Changcheng Ju

The present disclosure provides an array substrate and a preparation method thereof, a display device and an imaging method thereof. In one embodiment, an array substrate includes: a base substrate; and a plurality of imaging apertures and a plurality of sensor units on the base substrate, wherein the plurality of imaging apertures are respectively on the plurality of sensor units, so that each of the imaging apertures corresponds to each of the sensor units one by one.

Array substrate and preparation method thereof, display device and imaging method thereof

An electronic substrate, a manufacturing method thereof and a display panel are provided. The electronic substrate includes a base substrate as well as a photosensitive unit and a touch structure which are provided on the base substrate. The photosensitive unit includes a first electrode layer, and the touch structure includes a first touch electrode layer. The first electrode layer and the first touch electrode layer are in a same first conductive layer and made of a same material, and the first electrode layer and the first touch electrode layer insulated from each other.

Electronic substrate, manufacturing method thereof, and display panel

A touch control display panel is provided. The touch control display panel includes a base substrate; and a black matrix layer on the base substrate and in an inter-subpixel region of the touch control display panel. The black matrix layer includes a non-sensing portion, and a plurality of sensing portions spaced apart from the non-sensing portion. The touch control display panel further includes a first electrode layer including a plurality of first electrode blocks respectively between the plurality of sensing portions and the base substrate; and a second electrode layer including a plurality of second electrode blocks respectively on a side of the plurality of sensing portions away from the first electrode layer. A respective one of the plurality of sensing portions is configured to undergo a restorable change in electrical resistivity in response to a pressure from a touch.

Touch control display panel, touch control display apparatus, touch substrate, and method of fabricating touch control display panel

A display substrate, a display panel, and a display device are provided. The display substrate includes a transparent region and a pixel display region surrounding at least a portion of the transparent region. The display substrate includes a base substrate and a first optical layer located on the base substrate, the first optical layer is located within the pixel display region. A portion of the first optical layer close to the transparent region includes a first light ray deflection part configured to deflect image light of the pixel display region around the transparent region toward the transparent region for displaying in the transparent region.

Display substrate, display panel and display device

The present disclosure provides a display panel and a method for fabricating the same, a display device and a fingerprint recognition method and belongs to the field of display technologies. The display panel includes a base substrate, a plurality of pixel units and a plurality of photosensitive units. The photosensitive units and the pixel units are disposed on the same side of the base substrate. Each of the photosensitive units is disposed between adjacent ones of the pixel units.

Display panel and method for fabricating the same, display device and fingerprint recognition method

The present disclosure relates to a quantum dot light-emitting diode, comprising: a first electrode layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a second electrode layer, which are sequentially formed on a base substrate; and a buffer layer arranged between the quantum dot light-emitting layer and the electron transport layer, wherein the buffer layer is configured such that a difference between an electron injection rate and a hole transport rate of the quantum dot light-emitting layer is less than a preset threshold. The present disclosure further relates to a method for preparing a quantum dot light-emitting diode, and an array substrate and a display device including the quantum dot light-emitting diode.

Quantum dot light-emitting diode, method for preparing the same, array substrate and display device

The present disclosure provides a quantum-dot electroluminescent device, including a light-emitting layer, wherein the light-emitting layer is made of a thermally activated delayed fluorescence material and a quantum-dot light-emitting material which are capable of emitting white light by mixing together in proportion in case of excitation.

Quantum-dot electroluminescent device, method for preparing the same, and display device

The present disclosure provides a light-emitting device and manufacturing method thereof, and a display apparatus containing the light-emitting device. The light-emitting device comprises a quantum dot light-emitting layer, an electron transport layer, and an energy transfer layer. The quantum dot light-emitting layer comprises a quantum dot material. The energy transfer layer is between the quantum dot light-emitting layer and the electron transport layer. The energy transfer layer is configured to facilitate a transfer of energy from the electron transport layer to the quantum dot light-emitting layer such that the quantum dot light-emitting layer has an improved electroluminescence efficiency compared with the quantum dot light-emitting layer having an energy transferred directly from the electron transport layer without the energy transfer layer.

Light-emitting device and display apparatus

Embodiments of the invention disclose a display device, comprising a substrate, a plurality of pixels on the substrate and a backlight module located at a side of the substrate away from the pixels. Each pixel has a microcavity structure, in which the light emitted from the backlight module oscillates many times and exits as visible light of at least three colors, thereby enabling the display device to realize color display. Compared to the existing liquid crystal display device, this display device will not be limited by the manufacturing process when it is applied in the flexible display field. Compared to the existing organic electroluminescent display device, this display device will not have the problems of low yield, high cost and short life time, etc.

Display device

A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.

Crosslinkable quantum dot and preparing method thereof, array substrate and preparing method thereof

A quantum dot light-emitting device, a fabricating method thereof, and a display substrate are provided. The quantum dot light-emitting device includes: a base substrate; a first electrode layer, a light-emitting layer, a second electrode layer and an encapsulation layer which are sequentially formed on the base substrate, wherein the light-emitting layer includes a quantum dot light emitting material; a fluorescent material is disposed between the first electrode layer and the second electrode layer, and the fluorescent material includes a thermally activated delayed fluorescence (TADF) material; one of the first electrode layer and the second electrode layer is an anode layer, and the other of the first electrode layer and the second electrode layer is a cathode layer.

Growing community of inventors

Beijing, China

Yuedi He