Boe Technology Group Co., Ltd.

Ordos Yuansheng Optoelectronics Co., Ltd.

Yuebai Han

Xinxin Jin

Shanshan Bao

Xiaopeng Bai

Minghua Xuan

Ming Wang

Tao Yang

Liang Sun

Weilin Lai

Jin Zhao

Guoqing Zhang

Pucha Zhao

Hongwei Gao

Mingyang Zhang

Embodiments of the present disclosure provide a test circuit, a test method, a display panel and a display apparatus. Each of the signal input terminals may input a plurality of signals in a time division multiplexed manner, and in turn may be controlled by the corresponding switches to form a plurality of signal lines, a signal flow of the plurality of signal lines are totally different from each other under control of the switches. For example, one of the signal lines may function as a signal input line, and the other one of the signal lines may function as a signal input line for other specific testing, such as aging process so as to input signals different from the normal turn-on state signals. Consequently, by controlling the corresponding switches through the control signal terminals so that different input signals pass through different signal lines into the display panel to meet testing requirements of normal turn-on state testing, aging process and so on for the display panel. With respect to the prior art, the testing signals may be input without passing through a shift register unit, which avoids damage of a specific testing signal such as aging signal on the shift register unit and ensure a normal displaying function of the display panel.

Test circuit, test method, display panel and display apparatus

The present disclosure relates to a method of electrically aging a PMOS thin film transistor. The method includes applying a first voltage Vg with an amplitude of A volts to a gate of the PMOS thin film transistor; applying a second voltage Vs with an amplitude of (A&#x2212;40) to (A&#x2212;8) volts to a source of the PMOS thin film transistor; and applying a third voltage Vd with an amplitude of (A&#x2212;80) to (A&#x2212;16) volts to a drain of the PMOS thin film transistor. Application of the first voltage Vg, the second voltage Vs and the third voltage Vd is maintained for a predetermined time period, and Vd&#x2212;Vs&#x3c;0. In this way, reduction of a leakage current of the PMOS thin film transistor is achieved without changing a structural design of the thin film transistor.

Method for electrically aging a PMOS thin film transistor

A method and device for correcting a color shift of an OLED display panel, and a display device are disclosed. The method includes: performing an ageing treatment on the monochromatic luminescent devices in the OLED display panel; performing a luminescent lifetime attenuation test on the monochromatic luminescent devices after the ageing treatment respectively, and obtaining corresponding luminescent lifetime attenuation rates of the monochromatic luminescent devices; and performing an ageing treatment on the monochromatic luminescent device with rapidest luminescent lifetime attenuation rate again when differences between the luminescent lifetime attenuation rates of the monochromatic luminescent devices are greater than a preset threshold, until differences between the luminescent lifetime attenuation rates of the monochromatic luminescent devices are less than the preset threshold. The method effectively corrects the color shift phenomenon of display images of an OLED display product after long-term use.

Method and device for correcting color shift of organic light-emitting diode (OLED) display panel, and display device

The present disclosure provides a device and a method for transferring a display panel. The device includes a carrier configured to transfer the display panel, and a light-shielding plate secured onto the carrier and configured to shield a display region of the display panel when the display panel enters an irradiation region.

Device and method for transferring display panel

Growing community of inventors

Beijing, China

Yuebai Han