Integrated Device Technology, Inc.

Yue Yu

Craig DeSimone

YanBo Wang

Alejandro F Gonzalez

Praveen Rajan Singh

Yuan Yuan Zhang

Yi Xie

Al Xuefeng Fang

Hui Yu

Roland T Knaack

Yu Zhang

Garret Davey

Zhigang Hu

Scott Herrington

Shaokang Wang

Han Bi

HaiQi Liu

Liang Leon Zhang

Yumin Zhang

Suresh Atluri

An apparatus includes a control circuit comprising (i) a first differential data strobe input/output circuit having a first set of driver and termination control inputs and (ii) a second differential data strobe input/output circuit having a second set of driver and termination control inputs. The first and the second sets of driver and termination control inputs are independently programmable. The first and the second differential data strobe input/output circuits operate in a first mode when the first differential data strobe input/output circuit is connected to a first memory device having a first data width and the second differential data strobe input/output circuit is connected to a second memory device having the first data width. The first and the second differential data strobe input/output circuits operate in a second mode when the first differential data strobe input/output circuit and the second differential data strobe input/output circuit are connected in parallel to a single memory device having a second data width.

Support for multiple widths of DRAM in double data rate controllers or data buffers

An apparatus includes an interface and a plurality of impedance branches. The interface may be configured to receive a data signal and a plurality of selection signals. The plurality of impedance branches may comprise a group of branches and a separated branch. The plurality of impedance branches may be configured to adjust an impedance value and a gain of a data path for the data signal in response to the selection signals. The group of branches may be controlled in response to the selection signals to select the impedance value and a first gain value in a first mode. The separated branch may replace one of the plurality of impedance branches in the group of branches in response to the selection signals to select a second gain value in a second mode.

Wide programmable gain receiver data path for single-ended memory interface application

A method for responding to a command sequence includes receiving a signal from a host carrying a plurality of commands in the command sequence, detecting a non-consecutive clock associated with a start of a current command in the command sequence, and generating a control signal in an active state to indicate detection of the non-consecutive clock.

Command sequence response in a memory data buffer

An apparatus includes a plurality of memory devices and a control circuit. The control circuit may be configured to operate with the memory devices having a first data width in a first mode and with the memory devices having a second data width in a second mode. The control circuit may be configured to implement two differential data strobe input/output circuits. The differential data strobe input/output circuits each may have driver and termination control inputs that are independently programmable. The differential data strobe input/output circuits may be configured to be connected in parallel when the control circuit is operating in the second mode.

Double data rate controllers and data buffers with support for multiple data widths of DRAM

An apparatus includes a line-termination circuit and a continuous-time linear equalizer circuit. The line-termination circuit may be configured to generate a data signal in response to an input signal. The input signal generally resides in a first voltage domain. The input signal may be single-ended. The data signal may be generated in the first voltage domain. The continuous-time linear equalizer circuit may be configured to generate an intermediate signal by equalizing the data signal relative to a reference voltage. The continuous-time linear equalizer circuit generally operates in a second voltage domain. The first voltage domain may be higher than the second voltage domain.

High signal voltage tolerance in single-ended memory interface

An apparatus includes a first circuit and a second circuit. The first circuit may be configured to generate a plurality of delayed signals each as a copy of an input signal shifted in time by a sequence of respective delays based on a control signal. At least two of the respective delays may have a different duration. The first circuit may also be configured to change a number of driver signals that are active during each delay in the sequence of respective delays based on the input signal and the plurality of delayed signals to control a slew rate of an output signal. The second circuit may be configured to drive the output signal in response to the driver signals.

Signal driver slew rate control

A method for responding to a command sequence includes receiving the command sequence associated with a targeted access to a memory system, detecting a non-consecutive clock associated with a start of the command sequence, and generating a control signal in an active state to indicate detection of the non-consecutive clock associated with the start of the command sequence.

An apparatus comprises a plurality of driver circuits and a control registers block. The plurality of driver circuits may be configured to drive a read line in response to a memory signal and a reference voltage. The control registers block generally configures the plurality of driver circuits to implement an asymmetric voltage swing of the read line about a voltage level that is half of the reference voltage.

Asymmetric on-state resistance driver optimized for multi-drop DDR4

An apparatus includes an interface and a circuit. The interface may be configured to generate a read signal that carries read data from a memory channel. The circuit may be configured to (i) modify the read signal with a de-emphasis on each pull up of the read signal and a pre-emphasis on each pull down of the read signal and (ii) transfer the read signal as modified to a memory controller.

Asymmetrical emphasis in a memory data bus driver

An apparatus includes a detector circuit and a data buffer. The detector circuit may be configured to (i) identify a start of a command sequence associated with a directed access to a memory system and (ii) generate a control signal indicating a non-consecutive clock associated with the start of the command sequence. The data buffer circuit may be configured to initialize a condition of a receiver circuit in response to the control signal prior to reception of a first data bit associated with the command sequence.

Inferring sampled data in decision feedback equalizer at restart of forwarded clock in memory system

An apparatus includes a first circuit and a second circuit. The first circuit may be configured to (i) generate a plurality of delayed signals each as a copy of an input signal shifted in time by a sequence of respective delays based on a control signal and (ii) change a number of driver signals that are active during each delay in the sequence of respective delays based on the input signal and the plurality of delayed signals to control a slew rate of an output signal. The second circuit may be configured to drive the output signal in response to the driver signals.

An apparatus comprising a plurality of driver circuits and a plurality of control registers. The plurality of driver circuits may be configured to modify a memory signal that transfers read data across a read line to a memory controller. The plurality of control registers may be configured to enable one or more of the driver circuits. A pull up strength and a pull down strength of the memory signal may be configured in response to how many of the plurality of driver circuits are enabled. The plurality of driver circuits implement an asymmetric pull up and pull down of the memory signal.

An apparatus includes an interface and a circuit. The interface may be configured to generate a memory signal that carries read data from a memory channel. The circuit may be configured to modify a read signal that transfers the read data across a read line to a memory controller. A filter may delay the memory signal to generate a delayed signal. A driver generally amplifies the memory signal to generate the read signal. The driver may modify the read signal with a de-emphasis on each pull up of the memory signal and a pre-emphasis on each pull down of the memory signal based on the delayed signal.

An apparatus having a first circuit and a second circuit. The first circuit may be configured to buffer an input signal received as a single-ended signal from a data bus connected between a memory channel and a memory controller. The second circuit may be configured to condition the input signal relative to a reference voltage to generate a differential signal. The reference voltage may be isolated from the second circuit in response to a transition from a power down condition to a power on condition.

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Johns Creek, GA, United States of America

Yue Yu