Innolight Technology (suzhou) Ltd.

Yue Xiao

Yuzhou Sun

Xianyao Li

Chih-Kuo Tseng

Mengxi Ji

Xiaoyao Li

Ming Han

Guoliang Chen

A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Photodetector with integrated reflective grating structure

An optical module includes a substrate, an optical device, and a plurality of light transmitting elements and a plurality of light receiving elements disposed between the optical device and the substrate. The optical device includes a device body, and an optical transceiver interface and a lens array that are disposed on the device body. The lens array is configured to optically couple the plurality of light transmitting elements with the optical transceiver interface, and optically couples the optical transceiver interface with the plurality of light receiving elements. An auxiliary lens is disposed on an optical coupling path between the plurality of light transmitting elements and the optical transceiver interface or between the optical transceiver interface and the plurality of light receiving elements.

Optical module comprising a reflective surface at a preset angle for reflecting light from light transmitting lenses to light receiving lenses

An electro-optic modulator includes a doped structure disposed on a top silicon layer of a substrate. The doped structure includes an optical waveguide, and a first P-type doped region and a first N-type doped region disposed respectively on two sides of the optical waveguide. The first P-type doped region is connected to the optical waveguide by means of a plurality of P-type doped link arms, and the first N-type doped region is connected to the optical waveguide by means of a plurality of N-type doped link arms. End portions of the plurality of P-type doped link arms and end portions of the plurality of N-type doped link arms are alternately arranged along a direction of light propagation to form PN junction depletion layers. The PN junction depletion layers are periodically arranged along the direction of light propagation to form the optical waveguide.

Electro-optic modulator

Growing community of inventors

Jiangsu, China

Yue Xiao