Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tencent Technology (shenzhen) Company Limited

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Yue Wu

Ming Xie

Wenzheng Li

Yuchun Hsiao

Yicheng Kuo

Zhichao Zhou

Chaoyu Zhong

Jianfeng Xu

Pangling Zhang

Tao Hu

Zhiwu Chen

Quan Li

Wei Wu

Jian Ye Chen

Gang Wang

Chunsheng Jiang

Yu-lien Chou

Yulien Chou

This application provides an information recommendation method, an electronic device, and a computer readable storage medium. The method includes: in response to receiving a recommendation instruction in an application for a target account: displaying, on a display interface of the application, a gap in operation capability data of the application between the target account and a second account; and displaying guidance content corresponding to operation capability data of the target account. The guidance content is used to improve the operation capability data of the target account.

Information recommendation method and apparatus, and electronic device

A manufacturing method for an IGZO active layer is disclosed. The method comprises steps of: after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer. The present invention also correspondingly discloses a manufacturing method for an oxide thin film transistor. By implementing the embodiments of the present invention, the elements on the film surface of the IGZO active layer can be adjusted to improve electrical properties.

Manufacturing method for IGZO active layer and oxide thin film transistor

Provided is a liquid crystal display panel and a liquid crystal display device. The liquid crystal display panel includes a substrate and a thin film transistor formed on the substrate, wherein a source and a drain of the thin film transistor have complementary V-shaped structures, so as to form a V-shaped space region between the source and the drain, such that when the thin film transistor is in operation, a V-shaped conductive channel is formed in a semiconductor layer of the thin film transistor. An activation current of the thin film transistor can be increased.

Liquid crystal display panel and liquid crystal display device

A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which exposes the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The photoresist is provided to fill the through hole so as to improve the quality of a display device.

Color filter on array substrate having a photoresist plug contacting a liquid crystal layer

A manufacturing method for an array substrate is provided. The manufacturing method includes steps of: forming a first metal layer, a gate electrode layer, a gate electrode insulated layer, a semiconductor layer, a second metal layer, a source electrode layer, and a drain electrode layer on a base substrate in order. The step of forming the gate electrode layer on the first metal layer further includes steps of: depositing a gate electrode metal layer; exposing, developing, and wet etching on the gate electrode metal layer; and removing a photoresist layer. Metal cations are added into a stripper liquid, an electrochemical corrosion potential of which is less than that of the first metal layer, so as to avoid a short line problem.

Manufacturing method for array substrate

A method for manufacturing a fullerence/PEDOT:PSS mixed solution includes the following steps: Step 1, preparing a fullerence solution by mixing fullerence molecules and water or a strong polar solvent, wherein the fullerence molecules are fullerence or fullerence derivants and the fullerence derivants are water-soluble fullerence derivants or water-insoluble fullerence derivants; and Step 2, mixing the fullerence solution and a PEDOT:PSS dilute solution of a certain concentration at a mass ration of 1:100 to 100:1 via mechanical agitation or ultrasonication to form a fullerence/PEDOT:PSS mixed solution in homogeneous dispersions.

Manufacturer method for fullerence/PEDOT:PSS mixed solution

A copper protective agent is provided. The copper protective agent is represented by a general formula (GI): HS&#x2014;R (GI); and R is a linear or branched alkyl group having 1 to 20 carbon atoms.

Copper protective agent

Described are a read-write control method for memory, and a corresponding memory and server. The method comprises: combining data to be written with each other into a data block, writing the data block in a free block of the memory, and recording an identifier and a corresponding index of the data in the memory, the index of the data being an offset indicating a memory location of the data in the memory; and reading the data from the memory location of the data in the memory according to an identifier and an index of the data to be read.

Read-write control method for memory, and corresponding memory and server

The present disclosure discloses a copper etchant solution additives and a method for producing copper etchant solution. The method includes: producing copper etchant solution additives, wherein the copper etchant solution additives is an inorganic solution with cupric ions (Cu2+), and deionized water is a solvent for the copper etchant solution additives and is electric neutrality; before wet-etching, the copper etchant solution additives is added in the copper etchant solution, and the copper etchant solution is with a cupric ions (Cu2+) concentration of 700-1000 ppm. Through the above method, the present disclosure can improve etchant property of copper etchant solution to increase etching rate and uniformity.

Copper etchant solution additives and method for producing copper etchant solution

A TFT array substrate includes a glass substrate, a buffer layer on the glass substrate, a source electrode, a passivation layer on the buffer layer, a gate electrode on the passivation layer, a gate insulating layer on the passivation layer and the gate electrode, an active layer, and a pixel electrode on the gate insulating layer and the active layer. A first source hole is formed in the buffer layer. The source electrode is disposed in the first source hole. A second source hole is formed in the passivation layer and over the first source hole. The source electrode extends into the second source hole. An active layer mounting hole is formed in the gate insulating layer and over the second source hole. The active layer is in the active layer mounting hole.

Array substrate including vertical TFT, and manufacturing method thereof

A manufacture method for fullerence/PEDOT:PSS mixed solution and a manufacture method for compound transparent conductive film having fullerence/PEDOT:PSS are provided in the present invention: making fullerence/PEDOT:PSS mixed solution to manufacture a transparent conductive film; sources of applicable materials are broad and prices thereof are cheap; the fullerence/PEDOT:PSS mixed solution can be further utilized to manufacture a compound transparent conductive film having fullerence/PEDOT:PSS on substrates or a variety of devices; the present invention discloses a manufacture method for a compound transparent conductive film having fullerence/PEDOT:PSS, and when manufacturing the compound transparent conductive film having fullerence/PEDOT:PSS via wet coating process which is with low cost and high efficiency comparing with manufacture of ITO film, and furthermore expensive PVD equipment can be waived, production cost can be reduced, manufacturing method can be simplified at the same time, production time is shorter and economic efficiency can be increased; the compound transparent conductive film having fullerence/PEDOT:PSS manufacturing in the present invention has high conductivity and high light transmittance to replace ITO films in the market.

Manufacture method for fullerence / PEDOT:PSS mixed solution and manufacture method for compound transparent conductive film having fullerence / PEDOT:PSS

Described are a read-write control method for memory, and a corresponding memory and server. The method comprises: dividing a storage resource of the memory by taking a block as a unit; to write data, combining the data to be written into a data block, writing the data block in a free segment of the memory, and recording an identifier and a corresponding index of the data, the index of the written data is an offset indicating a memory location of the data in the memory; to read data, reading the data from the offset of the memory according to an identifier and a index of the data to be read. When read-write control is performed on the memory, the number of the times that the I/O operation is performed on the memory is reduced during data writing, thereby improving the efficiency of the write operation on the memory.

A manufacturing method of a TFT substrate structure is provided, in which a graphene layer is formed on a semiconductor layer and after the formation of a second metal layer, the second metal layer is used as a shielding mask to conduct injection of fluoride ions into the graphene layer to form a modified area in a portion of the graphene layer that is located on and corresponds to a channel zone of the semiconductor layer. The modified area of the graphene layer shows a property of electrical insulation and a property of blocking moisture/oxygen so as to provide protection to the channel zone. Portions of the graphene layer that are located under source and drain electrodes are not doped with ions and preserve the excellent electrical conduction property of graphene to provide electrical connection between the source and drain electrodes and the semiconductor layer.

TFT substrate structure and manufacturing method thereof

According to an example, a web server receives an access request from one operator network of different operator networks, process the access request, and obtain processing data. The web server determines an output VIP address corresponding to an input VIP address carried in the access request according to a relationship between input VIP addresses and output VIP addresses of VS clusters of the different operator networks, and sends the processing data to a VS cluster indicated by the output VIP address via an internal network. The VS cluster selects one VS, and the VS selected sends the processing data to a user terminal via an external network.

Method and system for accessing network service

A system providing network access based on application layer data, including at least one client device, an access server, and a background server group. The client device is configured to establish a TCP connection with the access server and send a data request to the access server through the TCP connection. The access server is configured to select a background sever serving the client device from the background server group according to the data request, and send TCP information initiated in the TCP connection to the selected background server. The selected background server is configured to directly send data to the client device according to the TCP information.

Growing community of inventors

Shenzhen, China

Yue Wu