Other

Chinese Academy of Sciences

Yue Lu

Zhengxing Wu

Junzhi Yu

Xingyu Chen

Manling Sui

Furong Chen

A single-stage small-sample-object detection method based on decoupled metric is provided to solve the following problems: low detection accuracy of existing small-sample-object detection methods, the mutual interference between classification and regression in a non-decoupled form, and over-fitting during training of a detection network in case of small samples. The method includes: obtaining a to-be-detected image as an input image; and obtaining a class and a regression box corresponding to each to-be-detected object in the input image through a pre-constructed small-sample-object detection network DMNet, where the DMNet includes a multi-scale feature extraction network, a decoupled representation transformation module, an image-level distance metric learning module and a regression box prediction module. The new method avoids the over-fitting during training of the detection network, eliminates the mutual interference between the classification branch and the regression branch, and improves the accuracy of small-sample-object detection.

Single-stage small-sample-object detection method based on decoupled metric

A method for nanometre etching or printing using an electron beam in a humid environment, which belongs to the field of electronic exposure. The method comprises: first, attaching a solution, humid atmosphere or humid environment curing layer to the surface of a substrate required to be etched and printed; then placing same in an electron beam exposure device to conduct electron beam exposure, so that a required nanometre micromachining pattern can be etched and printed on the substrate. The humid environment solution used in the method is mostly deionized water, solution containing metal ions, complex or other environment-friendly solutions. In this method, a nanoscale micromachining finished product can be obtained after electron beam exposure without chemical components such as photoresist, etc. required in the traditional electron beam etching or printing process and complicated machining processes such as fixation, rinsing, etching, gold-plating, etc. Moreover, the electron beam exposure rate is fast, the line width of electron beam photoetching or printing is uniform, and the size of the line width is the same as that of the electron beam. Therefore, the production efficiency can be greatly increased, thereby reducing nanoscale micromachining production costs.

Direct nanolithography or printing method for electron beams in wet environment

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Beijing, China

Yue Lu