National Yang Ming Chiao Tung University

Yue-Cin Lin

Edward Yi Chang

Shih-Hsuan Tang

The method is disclosed that Siis implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GeSibuffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GeSibuffer layers (Si/GeSi/GeSi/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GeSibuffer layer. Finally, grow up high efficiency III-V solar cell on GeSibuffer layer.

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Hsinchu, Taiwan

Yue-Cin Lin