Everbright Institute of Semiconductor Photonics Co., Ltd.

Suzhou Everbright Photonics Co., Ltd.

Yudan Gou

Jun Wang

Shaoyang Tan

Li Zhou

Bo Li

Dayong Min

Yiwen Hu

Lichen Zhang

Yang Cheng

A multi-active area semiconductor structure and a method for manufacturing same. The multi-active area semiconductor structure includes: a (2k−1)common confining layer arranged between a kactive layer and a ktunnel junction and in contact with the ktunnel junction; and a 2kcommon confining layer arranged between the kactive layer and a (k+1)tunnel junction and in contact with the ktunnel junction, where a forbidden band width of a kquantum well layer is less than both a forbidden band width of a kfirst-semiconductor layer and a forbidden band width of a ksecond-semiconductor layer; a total thickness of the (2k−1)common confining layer and the 2kcommon confining layer is greater than a critical optical field coupling thickness and less than or equal to twice the critical optical field coupling thickness; and a thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the (2k−1)common confining layer, and the thickness of the kquantum well layer is less than or equal to 1/10 of a thickness of the 2kcommon confining layer. The multi-active area semiconductor structure has effectively improved light-emission efficiency and reduced optical field crosstalk.

Multi-active area semiconductor structure and method for manufacturing same

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Suzhou, China

Yudan Gou