Ngk Insulators, Inc.

Yudai Uno

Tomoyoshi Tai

Masashi Goto

Keiichiro Asai

Jungo Kondo

Yuichi Iwata

Naotake Okada

Ryosuke Hattori

Masahiko Namerikawa

Yoshimasa Kobayashi

Hiroharu Kobayashi

Tatsuya Hishiki

Shinya Kaneko

Masato Niwa

Hiroyoshi Ina

Takeshi Yamamoto

A composite substrate includes: a piezoelectric layer; and a reflective layer arranged on a rear surface side of the piezoelectric layer, wherein the reflective layer includes a high-impedance layer and a low-impedance layer containing silicon oxide, and wherein a ratio of a region of first structures in the high-impedance layer is more than 70%.

Composite substrate and surface acoustic wave element

A bonded body includes a supporting substrate, piezoelectric material substrate and a multilayer film between the supporting substrate and piezoelectric material substrate. The multilayer film includes a lamination structure having a first layer, second layer, third layer and fourth layer in that order. The first layer and third layer are composed of silicon oxides, and the second layer and fourth layer are composed of metal oxides. The refractive index of the second layer is higher than the refractive index of the first layer and refractive index of the third layer. The refractive index of the second layer is different from the refractive index of the fourth layer.

Bonded body and acoustic wave element

A composite substrate for an electro-optic element is disclosed. The composite substrate includes: an electro-optic crystal substrate having an electro-optic effect; a low-refractive-index layer being in contact with the electro-optic crystal substrate and having a lower refractive index than the electro-optical crystal substrate; and a support substrate bonded to the low-refractive-index layer at least via a bonding layer. A plurality of interfaces located between the low-refractive-index layer and the support substrate includes at least one rough interface having a roughness that is larger than a roughness of an interface between the electro-optic crystal substrate and the low-refractive-index layer.

Composite substrate for electro-optic element and method for manufacturing the same

A bonded body includes a supporting substrate composed of a metal oxide, a piezoelectric material substrate, a bonding layer provided between the supporting substrate and piezoelectric material substrate and having a composition of SiO(0.008≤x≤0.408), and an amorphous layer provided between the bonding layer and supporting substrate. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the supporting substrate.

A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of SiO(0.008≤x≤0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of SiO(0.008≤y≤0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

A phosphor element includes: a phosphor part having an incident face for excitation light, an opposing face opposing the incident face, and a side face, the phosphor part converting at least a part of the excitation light incident onto the incident face into a fluorescence and emitting the fluorescence from the incident face; an integral low refractive index layer on the side face and opposing face of the phosphor part and having a refractive index lower than that of the phosphor part; and an integral reflection film covering a surface of the low refractive index layer. The area of the incident face of the phosphor part is larger than the area of the opposing face.

Phosphor element and lighting device

An acoustic wave device includes a piezoelectric material substrate, an intermediate layer on the piezoelectric material substrate and composed of one or more materials selected from the group consisting of silicon oxide, aluminum nitride and sialon. A bonding layer is on the intermediate layer and is composed of one or more materials selected from the group consisting of tantalum pentoxide, niobium pentoxide, titanium oxide, mullite, alumina, and a high resistance silicon and hafnium oxide. A supporting body is composed of a polycrystalline ceramic and is bonded to the bonding layer by direct bonding, and an electrode is on the piezoelectric material substrate.

Acoustic wave devices and a method of producing the same

A vibrating plate-bonded body includes a supporting substrate composed of silicon, a vibrating plate composed of a highly rigid ceramics and having a thickness of 100 &#x3bc;m or smaller, and a bonding layer between the supporting substrate and vibrating plate, contacting a bonding surface of the vibrating plate and composed of &#x3b1;-Si. The arithmetic average roughness Ra of the bonding surface of the vibrating plate is 0.01 nm or more and 10.0 nm or less, and the pit density of the bonding surface of the vibrating plate is 10 counts or more per 100 &#x3bc;m.

Vibrating plate-bonded-body

A bonded body for an optical modulator includes a supporting substrate, an optical waveguide material provided on the supporting substrate and composed of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and an optical waveguide in the optical waveguide material. The supporting substrate is composed of a material selected from the group consisting of magnesium oxide and a magnesium-silicon composite oxide.

Bonded bodies for optical modulators, optical modulators and a method of producing bonded bodies for optical modulators

A bonded body includes a supporting substrate composed of a polycrystalline ceramic material or monocrystalline material, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of SiO(x represents an oxygen ratio). The oxygen ratio is increased or decreased from an end part of the bonding layer on the side of the piezoelectric single crystal substrate to an end part of the bonding layer on the side of the supporting substrate. The maximum value of the oxygen ratio x in the bonding layer is 0.013 or higher and 0.666 or lower, and the minimum value of the oxygen ratio is 0.001 or higher and 0.408 or lower.

Joint and elastic wave element

Phosphor element, method for producing same, and lighting device

A bonded body includes a piezoelectric single crystal substrate; a supporting substrate composed of a polycrystalline ceramic material or a single crystal material; a bonding layer provided on the piezoelectric single crystal substrate and having a composition of SiO(0.008&#x2264;x&#x2264;0.408); and an amorphous layer provided between the supporting substrate and bonding layer, the amorphous layer containing oxygen atoms and argon atoms. A concentration of the oxygen atoms at a central part of the amorphous layer is higher than a concentration of the oxygen atoms at a peripheral part of the amorphous layer.

Bonded body and elastic wave element

A bonded body includes: a piezoelectric single crystal substrate; a supporting substrate composed of a single crystal silicon; a bonding layer&#x2014;provided between the supporting substrate and piezoelectric single crystal substrate and having a composition of SiO(0.008&#x2264;x&#x2264;0.408); and an amorphous layer provided between the supporting substrate and bonding layer and containing silicon atoms, oxygen atoms, and argon atoms. The concentration of the oxygen atoms in an end part of the amorphous layer on a side of the bonding layer is higher than the average concentration of the oxygen atoms in the bonding layer.

A bonded body includes a supporting substrate, a piezoelectric single crystal substrate and a bonding layer provided between the supporting substrate and piezoelectric single crystal substrate. The bonding layer has a composition of SiO(x represents an oxygen ratio). The oxygen ratio x at a central part in a thickness direction of the bonding layer is higher than an oxygen ratio x at an end part of the bonding layer on a side of the piezoelectric single crystal substrate and an oxygen ratio x at an end part of the bonding layer on a side of the supporting substrate. The oxygen ratio at the central part in the thickness direction of the bonding layer is 0.013 or higher and 0.666 or lower.

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Nagoya, Japan

Yudai Uno