University of Electronic Science and Technology of China

Institute of Electronic and Information Engineering of Uestc in Guangdong

Yuci Lin

Bo Zhang

Zehong Li

Min Ren

Jinping Zhang

Lei Luo

Wei Gao

Chi Xie

Huiping Bao

Zhiheng Su

A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Trench MOS device with improved single event burn-out endurance

The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.

Super-junction schottky diode

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Chengdu, China

Yuci Lin