Beijing Naura Microelectronics Equipment Co., Ltd.

Yuchun Deng

Qiang Li

Chao Zhang

Peng Chen

Peijun Ding

Mengxin Zhao

Hougong Wang

Guoqing Qiu

Zhimin Bai

Bin Deng

The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Feeding structure, upper electrode assembly, and physical vapor deposition chamber and device

A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.

Annealing method, process chamber and annealing apparatus

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Beijing, China

Yuchun Deng