Peking University

Yucheng Guo

Fang Liu

Duo Li

Zhaoying Chen

Bowen Sheng

Bo Shen

Xinqiang Wang

Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array. The method includes preparing a composite conductive substrate; overlaying an insulating template onto the composite conductive substrate to prepare a template substrate; overlaying monocrystalline graphene onto the template substrate in a completely aligned manner to obtain a customized template graphene substrate including graphene array units, wherein one blue-region graphene array element, one green-region graphene array element, and two red-region graphene array elements in each graphene array unit have surface properties different from each other; then performing an in-situ process to epitaxially grow a vertical-structure all-nitride material, to obtain a full-color micro-LED array epitaxial wafer by one-step in-situ process; finally, performing packaging and preparing a transparent electrode, to obtain a vertical-structure full-color nitride micro-LED array with top light emission.

Method for monolithic integration preparation of full-color nitride semiconductor micro light-emitting diode array

Disclosed is a method for preparing a nitride light emitting diode (LED) and nondestructive interface separation. A two-dimensional atomic crystal layer on a transparent substrate is modified by using an atomic irradiation technology, to obtain an irradiated region; a nitride LED structure is prepared on a modified two-dimensional atomic crystal layer, and a support substrate is cured by means of a metal functional layer; visible laser is incident from a back surface of the transparent substrate to directionally destruct the irradiated region of the two-dimensional atomic crystal layer, so as to obtain a whole structure of the nitride LED structure, the metal functional layer and the support substrate that are separated from the transparent substrate. The present disclosure can nondestructively separate the interface and repeatedly use the transparent substrate.

Method for preparing nitride light emitting diode (LED) and nondestructive interface separation

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Beijing, China

Yucheng Guo