Sandisk 3d LLC

William Marsh Rice University

Sandisk Technologies Inc.

Yubao Li

James Mitchell Tour

April Dawn Schricker

Alexander Sinitskiy

Tanmay Kumar

Lin Zhong

Yangyin Chen

Jingyan Zhang

Chu-Chen Fu

Guangle Zhou

Jun Yao

Mian Dong

A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, the word line layer including a first conductive material having a first work function, forming a nonvolatile memory material on a sidewall of the hole, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, forming a local bit line in the hole, the local bit line including a second conductive material having a second work function, wherein the first work function is greater than the second work function, and forming a memory cell comprising the nonvolatile memory material at an intersection of the local bit line and the word line layer.

Methods and apparatus for three-dimensional nonvolatile memory

Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided.

Carbon nano-film reversible resistance-switchable elements and methods of forming the same

A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided.

Methods of forming a reversible resistance-switching metal-insulator-metal structure

Electronic devices comprising a dielectric material, at least one carbon sheet, and two electrode terminals are described herein. The devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. Uses of the electronic devices as two-terminal memory devices, logic units, and sensors are disclosed. Processes for making the electronic devices are disclosed. Methods for using the electronic devices in analytical methods are disclosed.

Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials

Vertically-stacked electronic devices having conductive carbon films are disclosed. The vertically-stacked devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. The vertically-stacked devices may be assembled into arrays where the vertically-stacked devices may be electrically addressed independently of one another. Uses of the vertically-stacked electronic devices and arrays as two-terminal memory devices, logic units, and sensors are disclosed. Crossbar arrays of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes are disclosed.

Vertically-stacked electronic devices having conductive carbon films

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Milpitas, CA, United States of America

Yubao Li