Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Yuanpeng Chen

Yuanjun Hsu

The present application provides a display panel and a display device. The display panel comprises a substrate and a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer comprises an active layer and a metal layer that are stacked, and the active layer comprises an active segment and a conductor segment connected to the active segment; and wherein the conductor segment comprises a lap portion connected to the metal layer and a conductor sub-segment between the lap portion and the active segment, and a groove is formed in the conductor sub-segment.

Display panel and display device

The present application provides a display panel, a manufacturing method thereof, and a display device; first intervals and second intervals are defined between a plurality of first electrodes, a plurality of first pixel banks are arranged corresponding to the first intervals, and a plurality of second pixel banks are arranged corresponding to the second intervals, wherein the second pixel banks cross over the first pixel banks, and a thickness of the second pixel banks is greater than a thickness of the first pixel banks, so that light-emitting materials of a same color can be continuously printed between adjacent ones of the second pixel banks.

Display panel, manufacturing method thereof, and display device

A display panel includes a substrate, a first metal layer, and a first insulating layer, an oxide semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, and a third metal layer stacked on each other sequentially. The first insulating layer includes a first region and a second region adjacent to the first region, and a thickness of the second region is less than a thickness of the first region. A projection of at least a portion of the oxide semiconductor layer projected on the substrate overlaps with a projection of the first metal layer projected on the substrate. The third metal layer is connected to the first metal layer through a third via hole, and the third via hole is extended through the first insulating layer and the third insulating layer.

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Shenzhen, China

Yuanpeng Chen