Beijing Tongmei Xtal Technology Co., Ltd.

Beijing Longfu Hospital

Yuanli Wang

Qingpu Wang

Weiguo Liu

Rajaram Shetty

Sung-Nee George Chu

Yvonne Zhou

Yanli Lu

Zhijun Tian

Morris Young

Davis Zhang

Vincent Wensen Liu

An ultrasound-induced positioning type puncture assembly and a sleeve type small needle knife are provided. The small needle knife includes a cutting assembly and a puncture assembly. The puncture assembly includes a puncture needle core and a puncture sleeve; an annular groove facing an ultrasound equipment probe is formed in an outer wall of the puncture sleeve along a circumferential direction; and a cross section of the annular groove is of lug-shaped.

Ultrasound-induced positioning type puncture assembly and sleeve type small needle knife

A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×10atoms/cc to 10×10atoms/cc, boron with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc, and gallium with an atomic concentration of from 1×10atoms/cc to 10×10atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.

Germanium single-crystal wafer, method for preparing germanium single-crystal wafer, method for preparing crystal bar, and use of single-crystal wafer

The present disclosure relates to a lateral sleeve pipe drill and a operating method, belong to the field of surgical instrument technologies, and solves the problems that a bone passage cannot be effectively corrected and is liable to be corrected excessively, and correction is time-consuming and damages important functional bone tissue morphology. The lateral sleeve pipe drill is of a hollow cylindrical shape and includes a first end and a second end. An outer wall of the first end is provided with a correction portion for correcting the bone passage. The first end is arranged in a human body and is of a particular shape adapted to different surgical methods, a surgical approach direction, and a human body internal structure.

Lateral sleeve pipe drill and operating method

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Monocrystalline germanium wafers, method for preparing the same, method for preparing ingots and use of monocrystalline wafers

A IIIA-VA group semi-conductor single crystal substrate () has one of or both of the following two properties: an oxygen content of 1.6&#xd7;10-5.6&#xd7;10atoms/cmin a range from the surface to a depth of 10 &#x3bc;m of the wafer, and an electron mobility of 4,800 cm/V&#xb7;s-5,850 cm/V&#xb7;s. Further, a method for preparing the semi-conductor single crystal substrate () comprises: placing a single crystal substrate () to be processed in a container (); sealing said container (), and keeping said single crystal substrate () to be processed at a temperature in the range of from the crystalline melting point &#x2212;240&#xb0; C. to the crystalline melting point &#x2212;30&#xb0; C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000&#xb0; C. to 1,200&#xb0; C. for 5 hours to 20 hours.

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Beijing, China

Yuanli Wang