United Microelectronics Corp.

Yuanli Ding

Zhibiao Zhou

Yu-Cheng Tung

Shao-Hui Wu

Hai Biao Yao

Pengfei Guo

A semiconductor device includes a substrate, a source region and a drain region, a gate dielectric layer, and a ferroelectric material layer. The ferroelectric material layer overlaps with the source region and overlaps with the drain region. The substrate further comprises a channel layer. A gate electrode is disposed on the substrate. The ferroelectric material layer is disposed between the channel layer and the gate electrode.

Semiconductor device having a ferroelectric material layer

A dual mode memory system is provided in the present invention, which includes a memory cell array with a plurality of oxide-semiconductor field effect transistors, each said oxide-semiconductor field effect transistor has a ferroelectric layer in the bottom gate to modulate the bottom gate bias voltage according to the polarization voltages provided by the dual mode control unit.

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Singapore, Singapore

Yuanli Ding