Jade Bird Display (shanghai) Limited

Qualcomm Incorporated

Yuankun Zhu

Qiming Li

Anle Fang

Deshuai Liu

Jian Guo

Jian Li

Yi Liu

Chaofeng Hui

Fojian Zhang

Hao Zhang

Tianya Lin

Shuang Zhao

Wei He

Jing Zhou

Guojing Liu

Pan Jiang

Zhuoqi Xu

Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may determine that a signal-to-noise ratio (SNR) of one or more communications from a serving cell satisfies an SNR threshold after establishing a New Radio radio resource control (RRC) connection with the serving cell. The UE may transmit a measurement message to the cell based at least in part, on the determining that the SNR of the one or more communications from the serving cell satisfies the SNR threshold. The UE may receive, from the serving cell, a list of one or more neighbor cells based at least in part on the transmitting the measurement message, and establish an RRC connection to a neighbor cell on the list based at least in part on determining that a radio link failure occurred. Numerous other aspects are provided.

Recovery from radio link failure

Methods, systems, and devices for wireless communications are described. A user equipment (UE) may identify that it is operating in a dual-subscription mode that includes a first subscription and a second subscription. In some cases, the UE may include an application that is requesting to establish a data connection in accordance with an access preference rule for the application. The UE may determine that the access preference rule lacks a match among policies of a first route selection policy associated with the first subscription (e.g., a default subscription). The UE may then evaluate a second route selection policy associated with the second subscription for a policy that matches the access preference rule based on determining the lack of the match among policies of the first route selection policy. The UE may establish the data connection after evaluating the second route selection policy for the matching policy.

Methods to establish a protocol data unit session

Certain aspects of the present disclosure provide techniques for dynamic slot management for radio frames. A method that may be performed by abase station (BS) includes determining a physical resource block (PRB) utilization of each active slot of a plurality of active slots over a first monitoring period of time. The method also includes calculating, based on the PRB utilization of each of the plurality of active slots, a PRB average utilization value over the first monitoring period of time. The method further includes determining whether the PRB average utilization value satisfies a first PRB threshold value. The method also includes in response to determining that the PRB average utilization value fails to satisfy the first PRB threshold value, deactivating a set of active slots of the plurality of active slots resulting in a modified plurality of active slots over the first monitoring period of time.

Dynamic slot management of radio frames

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and from a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer, and the bottom edge of the second type conductive layer is aligned with the top edge of the first type conductive layer. The micro-LED chip further includes a metal layer formed on the light emitting layer between adjacent micro-LEDs.

Micro-LED structure and micro-LED chip including same

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the first type conductive layer. An edge of the light emitting layer is aligned with an edge of the second type conductive layer. The edge of the second type conductive layer extends along the horizontal level away from the edge of the first type conductive layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

Micro-LED structure and micro-led chip including same

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A bottom edge of the second type conductive layer is aligned with a top edge of the first type conductive layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer.

Micro-LED structure including continuous light emitting layer, and micro-LED chip including same

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

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Shanghai, China

Yuankun Zhu