Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Yuankui Ding

Ce Zhao

Yingbin Hu

Wei Song

Wei Li

Liangchen Yan

Bin Zhou

Dongfang Wang

Jun Feng Liu

Ming Hsi Wang

Leilei Cheng

Liusong Ni

Heekyu Kim

Guangcai Yuan

Ming Wang

Yang Zhang

Jun Cheng

Ning Liu

Guangyao Li

Yongchao Huang

Qinghe Wang

Luke Ding

Tongshang Su

Haitao Wang

Xuechao Sun

Zhaofan Liu

Chaowei Hao

Junlin Peng

A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.

Light-emitting device and method for manufacturing the same, and display panel

The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.

Method for manufacturing organic light-emitting diode display substrate

The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Thin film transistor and manufacturing method thereof, display substrate and display apparatus

The present disclosure provides a method for detecting a display substrate and a device for detecting a display substrate. The method includes: exciting a threshold voltage of a driving transistor in each pixel driving circuit in the display substrate, so that the threshold voltage of the driving transistor with a shifted threshold voltage is further shifted; inputting a detection signal to each pixel driving circuit in the display substrate, where the detection signal is a signal enabling the pixel driving circuit to operate normally; and judging whether the display substrate is normal or not according to the voltage output by each pixel driving circuit.

Method and device for detecting display substrate

This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.

Array substrate, and production method thereof, display panel, and display apparatus

The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.

Array substrate including pixel unit with switching transistor and driving transistor having different threshold voltages for improving display effect, and method of manufacturing the same

A display substrate and a manufacturing method thereof, and a display device, are disclosed. The display substrate includes a base substrate and a thin film transistor (TFT) array, including a plurality of TFTs. A first electrode in each TFT includes a first portion and a second portion, a height of the second portion being greater than a height of the first portion in a direction perpendicular to the base substrate, wherein the first portion forms a groove with respect to the second portion and a wall of the groove comprises the second portion of the first electrode of a thin film transistor adjacent to the TFT. A bottom of the groove is the first pixel electrode of a light emitting element, wherein an organic light emitting functional layer is deposited in the groove on the first pixel electrode, and the second pixel electrode on the organic light emitting functional layer.

Display substrate and manufacturing method thereof, and display device

The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Thin film transistor, fabricating method thereof, and display apparatus

A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.

Thin film transistor and manufacturing method thereof and electronic device

The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.

Display substrate, manufacturing method thereof, and display apparatus

A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.

Method of fabricating display substrate, display substrate, and display apparatus

The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.

Transistor and manufacturing method thereof, display substrate and display device

A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.

Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, display device

Organic light-emitting diode display substrate, method for manufacturing organic light-emitting diode display substrate and display device

The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S, setting an initial width-to-length ratio of the channel region; S, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S, testing the TFT manufactured according to the initial width-to-length ratio; S, determining whether or not the test result satisfies a predetermined condition, performing Sif the test result satisfies the predetermined condition, and performing Sif the test result does not satisfy the predetermined condition; S, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing Sto Sagain.

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Beijing, China

Yuankui Ding