Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Yuanjun Hsu

Xingyu Zhou

Zhaosong Liu

Zhenguo Lin

Yuanpeng Chen

Yuanchun Wu

Liangfen Zhang

Poyen Lu

Dan Bai

Wei Wei

Weiran Cao

Weijing Zeng

Xiaoxing Zhang

Peng Zhang

Meng Zhang

Chuan Liu

Jangsoon Im

Changcheng Lo

Gaobo Lin

Shuichih Lien

Boru Yang

Changdong Chen

Hoising Kwok

Man Wong

Rongsheng Chen

Yadi Zhang

The present application provides a display panel and a display device. The display panel comprises a substrate and a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer comprises an active layer and a metal layer that are stacked, and the active layer comprises an active segment and a conductor segment connected to the active segment; and wherein the conductor segment comprises a lap portion connected to the metal layer and a conductor sub-segment between the lap portion and the active segment, and a groove is formed in the conductor sub-segment.

Display panel and display device

A display device is provided. A display panel includes a display device. The display device is provided with a gate driving area. The gate driving area is provided with a first transistor device. The first transistor device includes a first signal wire and a second signal wire. The first signal wire is electrically connected to a gate layer. The second signal wire is electrically connected to a first metal layer. Therefore, a double-gate structure, which can provide a large-current gate signal by only the second signal wire, is formed. Or, the double-gate structure can provide a large-current gate signal by both the first signal wire and the second signal wire. As a result, mobility of an active layer is improved.

Display device

A flexible display panel and a flexible array substrate are provided. The flexible display panel includes a flexible base and a thin film transistor. The thin film transistor includes an active layer, and the active layer is arranged on the flexible base. Open pores are formed in the active layer. The open pores penetrate through at least one part of the active layer.

Flexible display panel with open pores and flexible array substrate

The present application provides a display panel, a manufacturing method thereof, and a display device; first intervals and second intervals are defined between a plurality of first electrodes, a plurality of first pixel banks are arranged corresponding to the first intervals, and a plurality of second pixel banks are arranged corresponding to the second intervals, wherein the second pixel banks cross over the first pixel banks, and a thickness of the second pixel banks is greater than a thickness of the first pixel banks, so that light-emitting materials of a same color can be continuously printed between adjacent ones of the second pixel banks.

Display panel, manufacturing method thereof, and display device

A display panel includes a substrate, a first metal layer, and a first insulating layer, an oxide semiconductor layer, a second insulating layer, a second metal layer, a third insulating layer, and a third metal layer stacked on each other sequentially. The first insulating layer includes a first region and a second region adjacent to the first region, and a thickness of the second region is less than a thickness of the first region. A projection of at least a portion of the oxide semiconductor layer projected on the substrate overlaps with a projection of the first metal layer projected on the substrate. The third metal layer is connected to the first metal layer through a third via hole, and the third via hole is extended through the first insulating layer and the third insulating layer.

Display panel and manufacturing method thereof

The present disclosure provides an OLED display panel which includes a substrate, a drive circuit layer, a light-emitting functional layer, and a pixel definition layer. The light-emitting functional layer includes a light-emitting area and a non-light-emitting area. The drive circuit layer includes a buffer layer, a first electrode plate, and a second electrode plate, and the first electrode plate and the second electrode plate form a storage capacitor. It solves the technical problem of current OLED display panels having dark stripes by not depositing the first electrode plate when silicon nitride is deposited to form a first buffer layer which prevents ionic gases produced when silicon nitride is deposited from having a reduction reaction with the first electrode plate.

OLED display panel having storage capacitor and manufacturing method thereof

An array substrate, a manufacturing method thereof, and a display panel. The array substrate includes a light-emitting area and a non-light-emitting area. The array substrate comprises: a substrate; a gate insulating layer comprising a first gate insulating layer and a second gate insulating layer disposed on the substrate in sequence; and a storage capacitor disposed in the light-emitting area and comprising a first transparent electrode and a second transparent electrode. Wherein the first transparent electrode is disposed between the first gate insulating layer and the second gate insulating layer, and the second transparent electrode is disposed on the second gate insulating layer.

Array substrate, manufacturing method thereof, and display panel

The present application provides an array substrate and a manufacturing method thereof. The array substrate includes a thin film transistor and a storage capacitor prepared on a substrate; the thin film transistor includes a gate, an active layer, and a source/drain; the storage capacitor includes a first electrode and a second electrode isolated therefrom by a dielectric layer; the gate is disposed above the first electrode and located at one end of the first electrode; and the second electrode corresponds to a portion of the first electrode non-corresponding to the gate.

Array substrate and manufacturing method thereof

Provided are an ink jet printing organic light emitting diode display panel and a manufacturing method thereof. The method includes: sequentially forming a passivation layer and a planarization layer on a carrier substrate prepared with one pair of thin film transistors, wherein the passivation layer covers the one pair of thin film transistors; forming one pair of vias in the passivation layer and the planarization layer; forming one pair of anodes on the planarization layer, wherein the one pair of anodes are electrically connected to the one pair of thin film transistors through the one pair of vias in the passivation layer and the planarization layer; preparing an electrode separation layer between the one pair of anodes with AlOor an organic photoresist material; forming a light emitting layer over the one pair of anodes by ink jet printing, wherein the light emitting layer covers the electrode separation layer.

Ink jet printing organic light emitting diode display panel and manufacturing method thereof

The present invention provides an OLED back plate and a manufacture method thereof. In the manufacture method of the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, and the planarization layer can serve as the mask of the etching process of the interlayer dielectric layer, and also can make the surface of the second source made on the surface thereof be flattened, which is advantageous to increase the area of the OLED light emitting area and to increase the aperture ratio. In the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, the surface of the second source made on the surface of the planarization layer is flattened, of which the OLED light emitting area is larger and the aperture ratio is higher.

Manufacture method of an OLED back plate

The present disclosure relates to an OLED panel and a manufacturing method thereof. The OLED panel includes: a glass substrate; a TFT light shielding layer; a buffer layer, a semiconductor layer; a patterned gate insulating layer; a patterned first metal layer; a interlayer insulating layer; a patterned second metal layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter; a planarization layer, wherein the planarization layer is provided with an opening structure corresponding to a storage capacitor area; an anode; a pixel defining layer; a light emitting layer; and a cathode. The present disclosure further provides a manufacturing method of an OLED panel thereof. The OLED panel and the manufacturing method thereof of the present disclosure can effectively increase the storage capacitance of the OLED panel, reduce the design area of the storage capacitor, and improve the panel aperture ratio.

OLED panel with a thin passivation layer below light emitting structure

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.

Hybrid CMOS device and manufacturing method thereof

The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.

TFT substrate and manufacturing method thereof and manufacturing method of OLED panel

OLED back plate

The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (), and forming the polysilicon thin film () on the substrate (), and a thickness of the polysilicon thin film () accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.

Growing community of inventors

Shenzhen, China

Yuanjun Hsu