Applied Materials, Inc.

Yuanhong Guo

Song-Moon Suh

Sheng Michael Guo

Marek W Radko

Yuji Murayama

Pingping Gou

Lei Zhou

Chang Ke

Ludovic Godet

Jeffrey C Hudgens

Paul F Ma

Xiaoxiong Yuan

Steven Victor Sansoni

Michael C Kuchar

Tobin Kaufman-Osborn

Liqi Wu

Erica Chen

Michael Sterling Jackson

See-Eng Phan

Cheng Pan

Steve Sansoni

Biao Liu

Matvey Farber

Shaofeng Chen

Nagendra Madiwal

Anurag Bansal

Cheng-Hsiung Matt Tsai

Bonnie T Chia

Pulkit Agarwal

Guangchi Xuan

David Langtry

A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

Remote plasma cleaning of chambers for electronics manufacturing systems

A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Organic contamination free surface machining

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Wafer treatment for achieving defect-free self-assembled monolayers

A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Methods and apparatus for supporting a substrate are provided herein. In some embodiments, a substrate support to support a substrate having a given diameter includes: a base ring having an inner diameter less than the given diameter, the base ring having a support surface configured to contact a first surface of the substrate and to form a seal between the support surface and the first surface of the substrate, when disposed atop the base ring; and a clamp ring having an inner diameter less than the given diameter, wherein the clamp ring includes a contact surface proximate the inner diameter configured to contact an upper surface of the substrate, when present, and wherein the clamp ring and the base ring are further configured to provide a bias force toward each other to clamp the substrate in the substrate support.

Substrate support with edge seal

Disclosed herein are systems and methods for cleaning a ceramic article using a stream of solid carbon dioxide (CO) particles. A method includes flowing liquid COinto a spray nozzle, and directing a first stream of solid COparticles from the spray nozzle toward a ceramic article for a first time duration to clean the ceramic article. The liquid COis converted into the first stream of solid COparticles upon exiting the spray nozzle. The first stream of solid COparticles causes a layer of solid COto be formed on the ceramic article. After the layer of solid COhas sublimated, a second stream of solid COparticles is directed from the spray nozzle toward the ceramic article for at least one of the first time duration or a second time duration to further clean the ceramic article.

Cleaning of chamber components with solid carbon dioxide particles

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Mountain View, CA, United States of America

Yuanhong Guo