Shenzhen China Star Optoelectronics Technology Co., Ltd.

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Other

Sun Yat-senuniversity

Yuanchun Wu

Xianjie Li

Shijian Su

Poyen Lu

Chunhsiung Fang

Yunchuan Li

Baixiang Han

Shibo Jiao

Ming Liu

Wei Yuan

Jinchuan Li

Yuanjun Hsu

Liangfen Zhang

Aiguo Tu

Kunkun Liu

Wei Wei

Jing Chen

Yawei Liu

Yi Cheng Zhang

Xingyu Zhou

Taijiun Hwang

Weiran Cao

Chenglei Nie

Meng Zhang

Chuan Liu

Yuying Cai

Jangsoon Im

Changcheng Lo

Xianglong Li

Xiaobo Yang

Xiaoling Wu

Shipeng Chi

Tsungyuan Wu

Jiarui Xu

Zhenguo Chi

Shuichih Lien

Shuren Zhang

Zheng Xu

Yan Tu

Leyu Wang

Lixi Wang

Jiangyong Pan

Boru Yang

Changdong Chen

Hoising Kwok

Man Wong

Rongsheng Chen

Bingjia Xu

Haozhong Wu

Junru Chen

Embodiments of the present application disclose a display device including a bendable display panel; a curvature adjusting mechanism, the curvature adjusting mechanism including at least one supporting back plate, the supporting back plate including a back plate body and at least one tightening-loosening member, the tightening-loosening member being deformationally linked with the back plate body; an adjusting portion movably connected to the tightening-loosening member. In the present application, the curvature of the display device may be adjusted by the cooperative work between the curvature adjusting mechanism and the adjusting portion, thereby meeting diversified user requirements.

Display device

A manufacturing method of a display panel and a display panel are provided by the application. The manufacturing method of the display panel includes steps of providing a substrate; forming a thin film transistor layer, an anode layer, and a pixel definition layer on the anode layer on the substrate, wherein the pixel definition layer comprises a plurality of pixel definition regions; printing an ink-jet printing ink on the anode layer inside the pixel definition regions to form an ink-jet printing precursor layer; and printing a membrane surface improving solvent on the ink-jet printing precursor layer, wherein after the membrane surface improving solvent volatilizes, an ink-jet printing layer is formed.

Manufacturing method of display panel using an ink-jet printing and display panel including the same

The present disclosure provides an array substrate, a manufacturing method of the array substrate, and a display device. The array substrate includes a hydrogen ion film formed between an active layer and a source/drain electrode of a low temperature poly-silicon thin film transistor, and a hole is formed in a region of the hydrogen ion film where a metal-oxide-semiconductor thin film transistor is disposed. Based on the hydrogen ion film, the electrical performance and stability of the low temperature poly-silicon thin film transistor are improved. Furthermore, hydrogen elements are not diffused to the region where the metal-oxide-semiconductor thin film transistor is disposed.

Array substrate, manufacturing method thereof, and display device

The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device.

Quantum dot light-emitting diode device and manufacturing method thereof

A display panel and a display device are provided. The display panel includes an organic electroluminescence device and a color conversion layer disposed on the organic electroluminescence device. The color conversion layer includes a quantum dot material and an organic electroluminescence material. The organic electroluminescent material is added to the color conversion layer. By mixing the organic electroluminescent material and the quantum dot material, the organic electroluminescent material forms excitons under excitation of blue light, and then singlet state excitons are transferred to quantum dots by fluorescence resonance energy, thereby improving an efficiency of the color conversion layer.

Display panel having color conversion layer and display device thereof

A double-sided organic light emitting diode (OLED) display panel is disclosed and includes a plurality of sub-pixels each of which has a top emission region and a bottom emission region. The top emission region has a first anode metal layer, a first OLED device layer, a first cathode metal layer, and an organic barrier layer. The bottom emission region has a second anode metal layer, a second OLED device layer, and a second cathode metal layer. The present invention can reduce an overall thickness of the double-sided OLED display panel.

Double-sided organic light emitting diode (OLED) display panel and manufacturing method

The invention provides a TFT array substrate and display panel. The TFT array substrate comprises: a patterned metal oxide active layer, a patterned gate metal layer, and a patterned source/drain metal layer; and further comprises at least a patterned hydrogen-absorbing metal layer, a dielectric layer is disposed between the hydrogen-absorbing metal layer and the patterned metal oxide active layer. The TFT array substrate and display panel of the invention can reduce reaction between the hydrogen atoms and the active layer of metal oxide TFT to achieve improving reliability of TFT.

TFT array substrate and display panel

An organic light emitting diode includes a light emitting layer that includes a light emitting material of the constitutional formula The structure is unitary, and the formula weight is determined, and the better solubility and film formation are provided, and the thin film status is stable; it possesses a very high decomposition temperature and a lower sublimation temperature, and is easy to sublime to be light emitting material of high purity, and can be applied for small molecule organic light emitting diode. In the method for manufacturing the light emitting material, p-bromothiophenol and 4-Bromo-2-fluorobenzonitrile are employed to be starting materials, and an intermediate of the light emitting material is obtained with a series of simple reactions, and finally, the light emitting material is obtained with Ullmann reaction or Suzuki reaction, and these steps are simple and the production is high.

Light emitting material, manufacture method thereof and organic light emitting diode using the light emitting material

The invention provides a color filter structure and a method of fabricating the same, the color filter structure including: a plurality of color filter units, wherein each of the plurality of color filter units has a longitudinal section of a circular arc shape or a polygonal arc shape.

Color filter structure and method of fabricating same

The present disclosure relates to a display panel including at least one scan line formed by a first metal layer, at least one data line formed by a second metal layer, and at least one dielectric layer between the first metal layer and the second metal layer. The scan line is of a segment structure including a plurality of sub-scan lines electrically connecting to connection patterns of the corresponding second metal layer via corresponding via holes of the dielectric layer, the connection patterns of the second metal layer electrically connects the sub-scan lines. The data line is of the segment structure including a plurality of sub-data lines electrically connecting to the connection patterns of the corresponding first metal layer via the corresponding via holes of the dielectric layer, and the connection patterns of the first metal layer electrically connects the sub-data lines.

Display panel

A method for manufacturing a light emitting material of the constitutional formula is provided. The structure is unitary, and the formula weight is determined, and the better solubility and film formation are provided, and the thin film status is stable; it possesses a very high decomposition temperature and a lower sublimation temperature, and is easy to sublime to be light emitting material of high purity, and can be applied for small molecule organic light emitting diode. In the method for manufacturing the light emitting material, p-bromothiophenol and 4-Bromo-2-fluorobenzonitrile are employed to be starting materials, and an intermediate of the light emitting material is obtained with a series of simple reactions, and finally, the light emitting material is obtained with Ullmann reaction or Suzuki reaction, and these steps are simple and the production is high.

An organic monomolecular white light material, a manufacturing method for the same, and an OLED element are provided. The organic monomolecular white light material has a room temperature phosphorescence emission property in a solid state, and can trap triplet exciton to achieve high efficient luminescence. Also, that has a higher thermal decomposition temperature and glass transition temperature, and the synthetic method and purification process thereof are simple. It has the advantages of mild reaction condition and high yield, and the thermal properties, luminescent properties, white-light color purity, etc of a final product can be adjusted by connecting to different aromatic fused ring or aromatic heterocyclic ring groups. In the OLED element, the organic monomolecular white light material is used as an emitting layer, and the emitting layer has a high luminous intensity and a good stability, thus the luminous efficiency and working life of the OLED element achieve practical requirements.

Organic monomolecular white light material, manufacturing method for the same, and OLED element

The disclosure provides a fabricating method of a QLED device and a QLED device. In the fabricating method of a QLED device, a mixed light-emitting layer is formed by doping a quantum dot material with a second hole transporting material having a valence band energy level between the quantum dot material and the first hole transporting material; a stepped barrier between the first hole transporting material and the doped second hole transporting material is used to enhance the hole injection; simultaneously, the first hole transporting material with a higher valence band energy level can block the electrons on one side of the hole transport layer close to the cathode to weaken the injection of electrons into the mixed light-emitting layer, thereby promoting the balance of carriers in the mixed light-emitting layer, improving the carrier recombination efficiency, and then improving the luminous efficiency and brightness of the QLED device.

Fabricating method of QLED device and QLED device

An OLED display device and a manufacturing method thereof are provided. The manufacturing method of the OLED display device realizes the effect of a plurality of non-connected OLED light emitting layers by providing an inverse trapezoidal photoresist in an interval region of a plurality sub-pixels. The produced OLED display device does not have lateral current forming an entire surface distributed cathode over the plurality of OLED light emitting layers of the common layer, that avoiding cross color phenomenon caused by carrier migration between adjacent sub-pixels and ensuring better display effect of the OLED display. Also, by fabricating an auxiliary cathode above or below the cathode and connected thereto, the sheet resistance of the cathode and the uneven brightness caused by voltage drop can both be reduced.

Organic light emitting display device and method of making the same

Provided is an organic light emitting diode display. The OLED display includes a thin film transistor substrate, a white OLED layer, a quantum dot photoluminescence film and a color filter film. The OLED display includes sub-pixels, which are sequentially disposed. The sub-pixels include a red sub-pixel, a green sub-pixel and a blue sub-pixel. A region of the quantum dot photoluminescence film corresponding to the red sub-pixel is provided with red quantum dots, and a region corresponding to the green sub-pixel is provided with green quantum dots. The red quantum dots and the green quantum dots are excited by white light emitted by the WOLED layer to emit high-purity red light and green light, respectively, and then filtered by the color filter film to be emitted. Thus, the OLED display has higher color saturation, which effectively broadens color gamut and can fully utilize the short-wavelength light.

Organic light emitting diode display

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Shenzhen, China

Yuanchun Wu