Huawei Technologies Co., Limited

Yuanbing Cheng

Heng Wang

Huafeng Lin

Sulin Yang

Shengping Li

Tianhai Chang

Yanbo Li

Yinghua Dong

Lei Jing

Jing Dai

Junye Jin

Guangcan Chen

Yuanfeng Mao

A laser chip includes a first power detector, a first controller, an optical splitter, a polarization splitter-rotator, a bandpass filter, and a slave laser. The optical splitter includes a first, a second, and a third port. The first port is configured to receive injection light of a master laser. The second port is connected to the first power detector. The optical splitter is configured such that the injection light enters the optical splitter through the first port, and is output to the polarization splitter-rotator through the third port. The polarization splitter-rotator is configured to perform optical splitting and polarization conversion on the injection light. The polarization splitter-rotator includes a first waveguide configured to transmit TE mode injection light after the injection light is split by the polarization splitter-rotator, and a second waveguide configured to transmit TM mode injection light after the injection light is split by the polarization splitter-rotator.

Laser chip, injection-locked laser, and network device

An embodiment of the present invention provides a photodetector chip, including a substrate, a semiconductor optical amplification section, and a photodetection section. The substrate includes a surface, the photodetection section and the semiconductor optical amplification section are arranged on the substrate, and the photodetection section is located in an optical signal output direction of the semiconductor optical amplification section. The semiconductor optical amplification section amplifies and filters an input optical signal to output an amplified and filtered optical signal to the photodetection section. The photodetection section is configured to convert the amplified and filtered optical signal into an electrical signal. The semiconductor optical amplification section includes a grating, the grating includes a first grating and a second grating that are cascaded, and the first grating is a slanted grating. The first grating and the second grating are configured to filter an optical signal entering the semiconductor optical amplification section.

Photodetector chip, optical receiving and transceiver components, optical module, and communications device

Example optical devices are described. One example optical device includes a receiver. The receiver includes a photodetector, a first amplifier, a second amplifier, and a controller, where the photodetector is coupled to the first amplifier, the first amplifier is coupled to the second amplifier, and the first amplifier and the second amplifier are separately coupled to the controller. The controller is configured to control a gain of the first amplifier and a gain of the second amplifier based on a preset arrival time of an optical signal and a gain intensity corresponding to the optical signal. The photodetector is configured to receive the optical signal and convert the optical signal into a current signal. The first amplifier is configured to convert the current signal into a first voltage signal. The second amplifier is configured to convert the first voltage signal into a second voltage signal.

Receiver, optical line terminal, and passive optical network system

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Wuhan, China

Yuanbing Cheng