Globalfoundries Inc.

Yuan Zhou

Haigou Huang

Chih-Chiang Chang

Dinesh R Koli

Tai Fong Chao

Xingzhao Shi

Methods of forming a SAC cap with SiN U-shaped and oxide T-shaped structures and the resulting devices are provided. Embodiments include forming a substrate with a trench and a plurality of gate structures; forming a nitride liner over portions of the substrate and along sidewalls of each gate structure; forming an ILD between each gate structure and in the trench; recessing each gate structure between the ILD; forming a U-shaped nitride liner over each recessed gate structure; forming an a-Si layer over the nitride liner and the U-shaped nitride liner; removing portions of the nitride liner, the U-shaped nitride liner and the a-Si layer; forming a W layer over portions of the substrate adjacent to and between the a-Si layer; forming an oxide liner over the nitride liner, the U-shaped nitride liner and along sidewalls of the W layer; and forming an oxide layer over portions of the oxide liner.

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Rexford, NY, United States of America

Yuan Zhou