Hewlett Packard Enterprise Development LP

Yuan Yuan

Zhihong Huang

Di Liang

Stanley Cheung

Yiwei Peng

Raymond G Beausoleil

Geza Kurczveil

Xiaoge Zeng

Wayne V Sorin

Marco Fiorentino

Thomas Van Vaerenbergh

Sudharsanan Srinivasan

Bassem Tossoun

Xian Xiao

Systems, devices, and methods are provided for built-in redundancy in optical devices that output an optical signal, for example, to photonic integrated circuits. The device and systems disclosed herein include a plurality of optical sources coupled to a plurality of waveguides. Each adjacent pair of the plurality of waveguides are coupled to an optical switching devices that comprises an interferometer having a first branch comprising a phase-shift mechanism coupled to one waveguide of the pair of waveguides. A voltage bias can be applied to the phase-shift mechanisms to tune a respective phase difference and direct an optical signal from any of the plurality of optical sources to the output end of the optical device. According to various examples disclosed herein, the phase-shift mechanisms comprises metal oxide semiconductor (MOS) capacitors.

Optical devices and systems for optical source redundancy

Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions having normalized output power. The device and systems disclosed herein include an interferometer comprising a first branch formed of a first waveguide and a second branch formed of a second waveguide. A resonator cavity is coupled to the second first waveguide and at least one phase-shift mechanism is coupled to one of the second waveguide and the resonator cavity. The at least one phase-shift mechanism is configured to control biases of the interferometer to achieve a desired activation function at an output of the interferometer, and an optical amplification mechanism is coupled to the output of the interferometer and configured to add optical gain to the desired activation function.

Reconfigurable all-optical activation functions having normalized output power

Systems, devices, and methods are provided for all-optical reconfigurable activation devices for realizing various activations functions using low input optical power. The device and systems disclosed herein include a directional coupler comprising a first phase-shift mechanism and an interferometer coupled to the directional coupler. The interferometer comprises at least one microring resonator and a second phase-shift mechanism coupled to thereto. The interferometer and the directional coupler comprise waveguides formed of a first material, while the microring resonator comprises a waveguide formed of a second material and a third phase-shift mechanism. The second material is provided as a low-loss material having a high Kerr effect and large bandgaps, to generate various nonlinear activation functions. The first, second, and third phase-shift mechanisms are configured to control biases within the disclosed systems and devices to achieve a desired activation function.

Reconfigurable all-optical nonlinear activation functions on silicon-integrated platform

Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

Optical device including a grated optical waveguide to improve modulation efficiency

Example optical devices having a Mach-Zehnder interferometer (MZI) with improved linearity are presented. An example optical device may include an MZI and a microring resonator (MRR) optically coupled to any one of a first optical waveguide arm or a second optical waveguide arm, where the MRR is operable in a resonance state and in an off-resonance state during operation of the optical device. The MZI includes a length difference between the first optical waveguide arm and the second optical waveguide arm thereby achieving a quarter-period phase delay between optical signals of the first optical waveguide arm and the second optical waveguide arm such that a superlinear transmission region of the microring resonator is aligned with peaks of an optical output of the MZI improving linearity of the optical output of the MZI.

Optical device having a Mach-Zehnder interferometer with improved linearity

Optical device for phase shifting an optical signal

Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

Integrated optical filter and photodetector and methods of fabricating the same

Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

Hybrid metal oxide semiconductor capacitor with enhanced phase tuning

Examples described herein relate to an optical resonating device. The optical resonating device includes a primary waveguide, a microring resonator, and a microring resonator photodiode. The primary waveguide allows a passage of an optical signal. The microring resonator is formed adjacent to the primary waveguide to couple therein a portion of the optical signal passing through the primary waveguide. Furthermore, the microring resonator photodiode is formed adjacent to the microring resonator to measure an intensity of the portion of the optical signal coupled into the microring resonator.

Optical resonating device having microring resonator photodiode

Implementations disclosed herein provide for devices and methods for obtaining parity time (PT) symmetric directional couplers through improved phase tuning, along with separate optical gain and optical loss tuning. The present disclosure integrates phase tuning and optical gain/loss tuning structures into waveguides of directional couplers disclosed herein. In some examples, directional couplers disclosed herein integrate one or more hybrid metal-oxide-semiconductor capacitors (MOSCAPs) formed by a dielectric layer between two semiconductor layers that provide for phase tuning via plasma dispersion and/or carrier accumulation depending on voltage bias polarity, and one or more optically active medium that provide for optical gain or loss tuning depending on voltage bias polarity.

Parity time symmetric directional couplers with phase tuning

Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

Ring resonator with integrated detector for monitoring light comprising an annular detection region that is physically isolated from a waveguide core

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Optical device having waveguide integrated modulator and light monitoring avalanche photodiode

A device may include: a highly doped nSi region; an intrinsic silicon multiplication region disposed on at least a portion of the nSi region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped pSi charge region disposed on at least part of the intrinsic silicon multiplication region, the pSi charge region having a thickness of about 40-60 nm; and a pGe absorption region disposed on at least a portion of the pSi charge region; wherein the pGe absorption region is doped across its entire thickness. The thickness of the nSi region may be about 100 nm and the thickness of the pSi charge region may be aboutnm. The pGe absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/&#xb0;C.

Temperature insensitive optical receiver

Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

Avalanche photodiode and an optical receiver having the same

An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.

Growing community of inventors

Milpitas, CA, United States of America

Yuan Yuan